نتایج جستجو برای: vertical etching
تعداد نتایج: 104962 فیلتر نتایج به سال:
The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the wet etching of as-deposited ITO films. The AlG...
We demonstrate a simple and efficient optical coupler for vertical coupling between optical fibers and InP-based waveguides using a slant-etched mirror. The angle of the etched mirror can be controlled by using an aluminum jig with a beveled surface inserted under the substrate during RIE (reactive ion etching) of InP/InGaAsP. The offchip coupler is fabricated simultaneously with a high-mesa wa...
This paper presents processes for glass micromachining, including sandblast, wet etching, reactive ion etching (RIE), and glass reflow techniques. The advantages as well as disadvantages of each method are presented and discussed in light of the experiments. Sandblast and wet etching techniques are simple processes but face difficulties in small and high-aspect-ratio structures. A sandblasted 2...
Electrochemically induced Fenton (electro-Fenton) reaction was used for efficient and controllable preparation of hydroxyl radicals, leading to the generation of luminescent quantum dots through etching of as-exfoliated MoS2 nanosheets. Morphologic changes of MoS2 nanosheets during the electro-Fenton reaction were monitored using transmission electron microscopy, showing that etching of MoS2 na...
The authors present a simplified fabrication method for the creation of free-standing dielectric mirrors for use in monolithic wavelength tunable surface-normal photonic devices, including vertical-cavity surface emitting lasers. This process utilizes a nonplasma dry etching process, based on the noble gas halide, xenon difluoride XeF2 , to remove an inorganic sacrificial film comprised of low-...
Silicon oxide-based materials such as quartz and silica are widely used in Microelectromechanical Systems (MEMS). One way to enhance capability of their deep plasma etching is to increase selectivity by the use of hard masks. Though this approach was studied previously, information on the use of hard masks for etching of silicon-oxide based materials on 200 mm substrates is scarce. We present r...
Using an SPTS Technologies Ltd. Pegasus deep reactive-ion etching (DRIE) system, an advanced two-step etching process has been developed for hollow microneedles in applications of transdermal blood sampling and drug delivery. Because of the different etching requirements of both narrow deep hollow and large open cavity, hollow etch and cavity etch steps have been achieved separately. This novel...
OBJECTIVE This study investigated the effect of a re-wetting agent on the microtensile bond strengths (mTBS) of primary and permanent dentin after acid or laser etching. MATERIALS AND METHODS Twelve permanent and 12 primary molar teeth were ground to expose an occlusal dentin surface. Each group teeth were randomly divided into groups; I-II: 37% phosphoric acid etching with/without re-wetting...
A method based on the sidewall transfer technique for fabricating two-dimensional (2D) nano-mold on a silicon substrate was developed. Instead of using expensive nanolithography, the authors fabricated 2D silicon nano-mold using standard ultraviolet lithography, conformal deposition of gold by radio frequency sputtering, argon sputter etching and deep reactive ion etching (DRIE). This technique...
Article history: Received 20 October 2015 Received in revised form 18 December 2015 Accepted 21 December 2015 Available online 22 December 2015 We present a new chlorine-free dry etching process which was used to successfully etch indium antimonide grown on gallium arsenide substrates while keeping the substrate temperature below 150 °C. By use of a reflowed photoresist mask a sidewall with 60 ...
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