This paper is an investigation into the high inrush current effect that emerges during energizing of drivers different circuit types loaded by light-emitting-diode (LED) strips. Two driver were analyzed—a voltage stabilization (VS) utilizing a Zener diode, and (CS) type in form integrated (IC). Inrush waveforms calculated for various numbers LEDs. In frame study, analysis executed energized div...

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its ex...

The current sources which are normally used in research laboratories are not suitable for low noise measurement systems because of the unacceptable level of low frequency noise which they introduce in the measurement chain. The most important source of low frequency noise in such instruments is the solid state device (usually a Zener diode) which is used as voltage reference. By using a novel c...

This article describes an effective, low-cost solution for sequential, one-time programming (OTP) and verification of zener diodes in an electronic micro-system. Using the proper structures of zener diodes (also known as ‘zener zap’) in a standard CMOS process, it is possible to achieve better accuracy in high-precision integrated circuits. For this purpose a solution has been developed for fas...

This work presents a circuit model for calculating the total energy dissipated into neutral species for nanosecond pulsed direct current (DC) dielectric barrier discharge (DBD) plasmas. Based on experimental observations, it is assumed that the nanosecond pulsed DBD’s which have been proposed for aerodynamic flow control can be approximated by two independent regions of homogeneous electric fie...

A pn-junction was successfully fabricated by depositing n-type CdSe thin films on p-type Si as a substrate using chemical bath deposition technique (CBD) at 70oC. Time of 6 hours and the preparing solution changed every 2 during deposition. Sodium Selenosulfate (with different weights) is source Se-2 ions, cadmium nitrate Cd+2 ions. The (I-V) characteristics for n-CdSe/p-Si junction show it beh...

One-dimensional carbon nanotube (CNT) junctions with interesting device characteristics have been designed by encapsulating p- and n-type organic molecules into CNTs with electrophilic tetracyano-p-quinodimethane (TCNQ) and nucleophilic tetrakis(dimethylamino)ethylene (TDAE) molecules in order to explore the effect of encapsulation of organic molecules and rectifying behaviors of the designed o...

The p-n Junction The p-n junction is a homojunction between a p-type and an n-type semiconductor. It acts as a diode, which can serve in electronics as a rectifier, logic gate, voltage regulator (Zener diode), switching or tuner (varactor diode); and in optoelectronics as a light-emitting diode (LED), laser diode, photodetector, or solar cell. In a relatively simplified view of semiconductor ma...