Film growth rates during DCMS and HIPIMS sputtering in Ar are measured for ten technologically-relevant elemental target materials: Al, Si, Ti, Cr, Y, Zr, Nb, Hf, Ta, and W, spanning wide range of masses, ionization energies, and sputter yields. Surprisingly, the ratio of power-normalized HIPIMS and DCMS rates α decays exponentially with increasing peak target current density JJTT for all metal...