The results of studies on the development technological methods for formation low-resistivity contact systems to n- and p-SiC based single multilayer Ni-, Al- Ti-compositions 4H-SiC bipolar devices are presented. It is shown that contacts Ni n-4H-SiC (rho c =3.6·10 -4 Ohm·cm 2 ) Ni/Al p-4H-SiC =5.9·10 -5 possible within a cycle vacuum annealing at 1000 o C 120 s. This solution makes it reduce n...

Nanometric Carbid Silicon (SiC) supported monometallic and bimetallic catalysts containing Fe, Co, Ni transition metals were prepared by wet impregnation method. Multiwall carbon nanotubes (MWCNTs) were synthesized over the prepared catalysts from catalytic decomposition of acetylene at 850°C by thermal chemical vapor deposition (TCVD) technique. The synthesized nanomaterials (catalysts and CNT...

In this paper, the possibility of mechanical coating of aluminum with either Ni or SiC using planetary ball mill was studied. The Al substrate was fixed inside of the vial lid of a planetary ball mill filled with milling balls and starting powder. The phase analysis and crystallite size measurement of the coatings were carried out using X-ray diffraction (XRD) method. Scanning electron micro...

High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...

Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive areas of 1-4 cm² were fabricated using high-quality lightly doped epitaxial 4H-SiC material, and were tested in the detection of alpha particles and pulsed X-rays/UV-light. A linear energy response to alpha particles ranging from 5.157 to 5.805 MeV was obtained. The detectors were proved to have a low da...