Resistive memories store information in a crossbar arrangement of two-terminal devices that can be programmed to patterns high or low resistance. While extremely compact, this technology suffers from the "sneak-path" problem: certain cannot recovered, as multiple resistances parallel make resistance indistinguishable In paper, multi-layer device is considered, and number bits it derived exactly...

Abstract—The purpose of this paper is to propose a novel generalized single-band transformer for two arbitrary complex load and source impedances and a novel high-power amplifier using this new transformer. By adding two reactive parts at across terminals, the coupled line with flexible electrical length has practical evenand odd-mode characteristic impedances. Thus, the total circuit layout ca...

Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of...

Combining resistive switching and magnetoresistance in a system exhibits great potential for application in multibit nonvolatile data storage. It is in significance and difficulty to seek a material with resistances that can be stably switched at different resistance states modulated by an electrical field and a magnetic field. In this paper, we propose a novel electrode/ZnO/ZnO-Co/electrode de...

Post-metal annealing temperature-dependent forming-free resistive switching memory characteristics, Fowler-Nordheim (F-N) tunneling at low resistance state, and after reset using a new W/WO3/WOx/W structure have been investigated for the first time. Transmission electron microscope image shows a polycrystalline WO3/WOx layer in a device with a size of 150 × 150 nm(2). The composition of WO3/WOx...

This paper presents a acomprehensive design and control strategy for photovoltaic (PV) energy storage system. The system consists of 2kW system, two converter circuits, resistive load 6 Ohm lithium-ion battery integrated with DC Bus applying constant power to the load. scheme offered topologies, one is boost another DC/DC bidirectional converter. directly connected in series PV array whereas (B...

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HCN and CO line diagnostics provide new insight into the OH megamaser (OHM) phenomenon, suggesting a dense gas trigger for OHMs. We identify three physical properties that differentiate OHM hosts from other starburst galaxies: (1) OHMs have the highest mean molecular gas densities among starburst galaxies; nearly all OHM hosts have n̄(H2) = 103–104 cm−3 (OH line-emitting clouds likely have n(H2)...

The formation of DNA adducts from [3H]-7-hydroxymethyl-12-methylbenz(a)anthracene (7-OHM-12-MBA) and [3H]-7,12-dimethylbenz(a)anthracene (DMBA) in the epidermis of Sencar mice was analyzed. Comparison of Sephadex LH-20 chromatographic profiles of DNA samples isolated from mice treated with DMBA or 7-OHM-12-MBA suggested that the DMBA-treated animals contained DNA adduct(s) derived from the furt...

While emphasis has been placed on coherent heterojunc­ tions for high speed device structures, the use of mismatched layers unstrained via misfit dislocations has been limited. Yet, in certain cases, the misfit dislocated layer can be ad­ vantageous. For example, in the growth of GaAs on In05 .1 G3o.47 As it has been shown that the misfit dislocations can be isolated to the GaAs interface regio...