We demonstrate a successful process scheme for the integration of CMOS-compatible ferroelectric gate stack on scaled vertical InAs nanowire gate-all-around MOSFET silicon. The devices show promising device characteristics with nanosecond write time and large memory window >1.5 V. In current implementation, performance is mainly limited by access resistance, which attributed to thermal sensitivi...

We discuss in detail a compact all-solid-state laser delivering sub-5-fs, 2-MW pulses at repetition rates up to 1 MHz. The shortest pulse generated thus far measures only 4.6 fs. The laser system employed is based on a cavitydumped Ti:sapphire oscillator whose output is chirped in a single-mode fiber. The resulting white-light continuum is compressed in a novel high-throughput prism chirped-mir...

Abstract 2D materials provide an effective strategy for the construction of fast‐responsive and highly sensitive Schottky heterojunction devices. However, strong Fermi pinning at contact between bulk metallic electrodes semiconductor greatly hinders wide application such devices in optoelectronics. Herein, a self‐powered photodetector with high performance is fabricated based on all‐2D van der ...

We propose and demonstrate an all-optical sub-carrier label-swapping subsystem with 2R regeneration and wavelength conversion. The experimental results show error-free operation as well as regenerating operation with negative power penalty. 2003 Optical Society of America OCIS codes: 060.2330 Fiber optics communications, 060.4510 Optical communications