The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies...

Both raloxifene (RLX) and alendronate (ALN) can treat and prevent new vertebral fractures, increase bone mineral density (BMD), and decrease biochemical markers of bone turnover in postmenopausal women with osteoporosis. This phase 3, randomized, double-blind 1-yr study assessed the effects of combined RLX and ALN in 331 postmenopausal women with osteoporosis (femoral neck BMD T-score, less tha...

The yellow color of bulk AlN crystals was found to be caused by the optical absorption of light with wavelengths shorter than that of yellow. This yellow impurity limits UV transparency and hence restricts the applications of AlN substrates for deep UV optoelectronic devices. Here, the optical properties of AlN epilayers, polycrystalline AlN, and bulk AlN single crystals have been investigated ...

Nucleation and growth of wurtzite AlN layers on nominal and off-axis Si(0 0 1) substrates by plasma-assisted molecular beam epitaxy is reported. The nucleation and the growth dynamics have been studied in situ by reflection high-energy electron diffraction. For the films grown on the nominal Si(0 0 1) surface, cross-sectional transmission electron microscopy and X-ray diffraction investigations...

Objective Alendronate (ALN) inhibits osteoclastic bone resorption and triggers osteostimulative properties both in vivo and in vitro, as shown by increase in matrix formation. This study aimed to explore the efficacy of 1% ALN gel as local drug delivery (LDD) in adjunct to scaling and root planing (SRP) for the treatment of chronic periodontitis among smokers. Material and Methods 75 intrabon...

The propagation of the fundamental quasi-symmetric Lamb mode S(0) travelling along 3C-SiC/c-AlN composite plates is theoretically studied with respect to the AlN and SiC film thickness, the acoustic wave propagation direction and the electrical boundary conditions. The temperature effects on the phase velocity have been considered for four AlN/SiC-based electroacoustic coupling configurations, ...

Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, a...

A systematic study is performed to optimize aluminum nitride (AlN) epilayers grown on (0001) sapphire by metal-organic vapor-phase epitaxy. Specifically, the impact of the AlN nucleation conditions on the crystalline quality and surface morphology of AlN epilayers is studied. Atomic force microscopy (AFM) and x-ray diffraction (XRD) results reveal that the nucleation layer plays a critical role...

AlxGa1−xN/GaN x 0.3 heterostructures with and without a high-temperature HT AlN interlayer IL have been grown on sapphire Al2O3 substrates and AlN buffer/Al2O3 templates by metal organic chemical vapor deposition. The effects of an AlN buffer layer BL grown on an Al2O3 substrate and an AlN IL grown under the AlGaN ternary layer TL on structural, morphological, and optical properties of the hete...

High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained by PLD have been systemically studied. It is found that the amorphous SiAlN interfacial layer is...