AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N₂/Ar flow rate and sputtering pressure on the microstructure of the A...

OBJECTIVE This study was designed to demonstrate that alendronate (ALN)/vitamin D3 combination tablets (ALN/D5600) are bioequivalent to corresponding doses of ALN and vitamin D3 as individual tablets in healthy Taiwanese volunteers. METHODS In this open-label, randomized, 2-period, crossover study, 68 volunteers were randomized to a single ALN/D5600 combination tablet or corresponding doses o...

Raloxifene (RAL) and alendronate (ALN) improve the biomechanical properties of bone by different mechanisms. The goal here was to investigate the effects of combination treatment of RAL and ALN on the biomechanical properties of vertebral bone. Six-month-old Sprague-Dawley rats (n = 80) were randomized into five experimental groups (sham, OVX, OVX + RAL, OVX + ALN, and OVX + RAL + ALN; n = 16/g...

Aluminum nitride (AlN) thin films were deposited on Si (100) substrates by using plasma-enhanced atomic layer deposition method (PEALD). Optimal PEALD parameters for AlN deposition were investigated. Under saturated deposition conditions, the clearly resolved fringes are observed from X-ray reflectivity (XRR) measurements, showing the perfectly smooth interface between the AlN film and Si (100)...

Two types of Aluminum nitride (AlN) based ceramic nanocomposite with multifunctionality were investigated to improve machinability or electrical conductivity of AlN ceramics with high thermal conductivity. The AlN/BN nanocomposite was fabricated by pressureless sintering AlN-BN composite powder, which was prepared by reducing and heating AlN particles coated with a mixture of boric acid, urea a...

Effects of gallium as a surfactant for the growth of AlN epilayers on SiC substrates by metal-organic chemical-vapour deposition have been studied. It was found that the use of gallium as a surfactant enables the growth of thick, crack-free AlN epilayers on SiC substrates. The photoluminescence and x-ray diffraction (XRD) analysis show that gallium surfactant can reduce some of the tensile stra...

objective(s): in line with previous research on the development of conjugated bisphosphonate ligands as new bone-avid agents, in this study, dota conjugated alendronate (dota-aln) was synthesized and evaluated after labeling with gallium-68 (68ga).methods: dota-aln was synthesized and characterized, followed by 68ga-dota-aln preparation, using dota-aln and 68gacl3 (ph: 4-5) at 92-95°c for 10 mi...

Alendronate (ALN) is a commonly used drug for the treatment of osteoporosis. Atypical femur fractures (AFFs) have been associated with long-term use of ALN and have recently become the subject of considerable attention as ALN use increases. This meta-analysis aimed to determine the relationship between ALN and AFF. The Embase, PubMed, and Cochrane library databases were searched for relevant st...

AlN nanowall structures were grown on Si (111) substrate using molecular beam epitaxy at substrate temperature of 700 °C with N/Al flux ratios ranging from 50 to 660. A few types of other AlN nanostructures were also grown under the nitrogen-rich conditions. The AlN nanowalls were ranged typically 60-120 nm in width and from 190 to 470 nm in length by changing N/Al flux ratio. The AlN nanowall ...