Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In th...

The aqueous-based Zn-ammine complex solutions represent one of the most promising routes to obtain the ZnO electron transport layer (ETL) at a low temperature in inverted organic solar cells (OSCs). However, to dope the ZnO film processed from the Zn-ammine complex solutions is difficult since the introduction of metal ions into the Zn-ammine complex is a nontrivial process as ammonium hydroxid...

To provide a front transparent electrode for use in highly efficient hydrogenated amorphous silicon (a-Si:H) thin-film solar cells, porous flat layer and micro-patterns of zinc oxide (ZnO) nanoparticle (NP) layers were prepared through ultraviolet nanoimprint lithography (UV-NIL) and deposited on Al-doped ZnO (AZO) layers. Through this, it was found that a porous micro-pattern of ZnO NPs disper...

We fabricated zinc oxide (ZnO) nanorods (NRs) with Al-doped ZnO (AZO) seed layers and dye-sensitized solar cells (DSSCs) employed the ZnO NRs between a TiO₂ photoelectrode and a fluorine-doped SnO₂ (FTO) electrode. The growth rate of the NRs was strongly dependent on the seed layer conditions, i.e., thickness, Al dopant and annealing temperature. Attaining a large particle size with a high crys...

Zinc oxide and Ga-doped ZnO nanowires and nanorods are synthesized on various substrate like Fluorine doped tin oxide glass plate, SiO2 coated Silicon substrate and aluminum nitride coated silicon substrates. The coating process carried out using zinc oxide sol-gel solution. The synthesized material was characterized using XRD (X-ray diffraction), FE-SEM (Field emission scanning electron micros...

We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The AZO films were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering at various power ratios. We used ...

This paper proposes a spin coating method to investigate the use of Al-doped ZnO (AZO) and F, Al co-doped (FAZO) films using zinc acetate as source aluminum nitrate ammonia fluoride dopant. Different processing temperatures have been conducted in-depth research on AZO FAZO thin film structures, morphology photoelectric properties. The results show that for film, intensity (002) diffraction peak...

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of Al(x)Zn(1-x)O nanocrystals with the size range of 33-55 nm. Al-doping increased the ban...

The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of...

In this paper, we proposed the effects of Mo thickness on the properties of AZO/Mo/AZO multilayer thin films for opto-electronics applications. The structural, optical and electrical properties of AZO/Mo/AZO thin films were investigated. Optimization of the thin films coatings resulted with low resistivity of 9.98 × 10 Ω-cm, mobility of 12.75 cm/V-s, carrier concentration of 1.05 × 10 cm, maxim...