نتایج جستجو برای: aluminum nitride

تعداد نتایج: 64159  

Stabilizations and atomic level quadrupole coupling constant (CQ) properties have been investigated for graphene–like monolayers (G–monolayers) of boron nitride (BN), boron phosphide (BP), aluminum nitride (AlN), and aluminum phosphide (AlP) structures. To this aim, density functional theory (DFT) calculations have been performed to optimize the model structures and also to evaluate the CQ para...

2004
K. H. Chung G. T. Liu J. G. Duh J. H. Wang

The purpose of this investigation was to develop a coating technique and to study the characteristics of titanium–aluminum nitride [(Ti,Al)N] films deposited on a base-metal alloy (Wiron88R) substrate. Titanium–aluminum nitride thin films were deposited on the alloy surface using a reactive radiofrequency sputtering method. The electrochemical properties of three specimens with and without coat...

2014
Kexiong Zhang Hongwei Liang Yang Liu Rensheng Shen Wenping Guo Dongsheng Wang Xiaochuan Xia Pengcheng Tao Chao Yang Yingmin Luo Guotong Du

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The...

2013
B. Cheng S. Choi J. E. Northrup Z. Yang C. Knollenberg M. Teepe T. Wunderer C. L. Chua N. M. Johnson

2009
Yi-Hung Liao Jung-Chuan Chou

The pH sensing and nonideal characteristics of a ruthenium nitride (RuN) sensing membrane pH sensor were investigated. RuN thin films were deposited from a 99.9% ruthenium target on p-type silicon substrates using radio frequency (r.f.) sputtering with N(2) gas. Subsequently, the nanometric structure and surface morphology of RuN thin films were determined. The sensitivity of the RuN sensing me...

Journal: :Physica Status Solidi (rrl) 2022

Heteroepitaxial crystallographic tilt has been investigated as a possible strain-relief mechanism in Al-rich (Al>50%) AlGaN heteroepitaxial layers grown on single-crystal (0001) AlN substrates with varying miscuts from 0.05° to 4.30°. The magnitude of the elastic lattice deformation-induced increases monotonically miscut angle, tightly following Nagai model. Although angles high 0.1° are record...

Journal: :Chemical communications 2014
Wei Fa Shuang Chen Xiao Cheng Zeng

Motivated by the recent successful synthesis of a new nanocarbon, namely, a warped, double-concave graphene "Pringle" (Nat. Chem., 2013, 5, 739), we investigate properties of warped boron-nitride (BN) and aluminum-nitride (AlN) analogues, i.e., the non-planar B40N40H30 and Al40N40H30 "Pringles" using density functional theory (DFT) calculations. Particular attention is placed on the effect of n...

2014
J. Z. Li J. Y. Lin H. X. Jiang M. A. Khan Q. Chen

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