نتایج جستجو برای: aluminum nitride nanocluster

تعداد نتایج: 65099  

Journal: :Physica B-condensed Matter 2023

How do boron–nitride and Möbius–type nanobelts interact with nickel, cadmium, lead nanoclusters? In order to find the lowest energy geometries, binding energies, complex stability, electrical characteristics, we applied semiempirical tight framework, as implemented in xTB software, this subject. Our simulations demonstrate that heavy metal nanoclusters favorably connect both nanobelts, while na...

Journal: :journal of physical and theoretical chemistry 0
reza soleymani young researchers and elite club, shahre-rey branch, islamic azad university, tehran, iran

influence of aluminum, gallium, indium- doping on the boron-nitride nanotubes (bnnts) investigated with density functional theory (dft) and hartreefock (hf) methods. for this purpose, the chemical shift of difference atomic nucleus was studied using the gauge included atomic orbital (giao) approch. in the following, structural parameter values, electrostatic potential, thermodynamic parameters,...

Journal: :Refractories and Industrial Ceramics 2013

Stabilizations and atomic level quadrupole coupling constant (CQ) properties have been investigated for graphene–like monolayers (G–monolayers) of boron nitride (BN), boron phosphide (BP), aluminum nitride (AlN), and aluminum phosphide (AlP) structures. To this aim, density functional theory (DFT) calculations have been performed to optimize the model structures and also to evaluate the CQ para...

2004
K. H. Chung G. T. Liu J. G. Duh J. H. Wang

The purpose of this investigation was to develop a coating technique and to study the characteristics of titanium–aluminum nitride [(Ti,Al)N] films deposited on a base-metal alloy (Wiron88R) substrate. Titanium–aluminum nitride thin films were deposited on the alloy surface using a reactive radiofrequency sputtering method. The electrochemical properties of three specimens with and without coat...

2014
Kexiong Zhang Hongwei Liang Yang Liu Rensheng Shen Wenping Guo Dongsheng Wang Xiaochuan Xia Pengcheng Tao Chao Yang Yingmin Luo Guotong Du

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The...

2013
B. Cheng S. Choi J. E. Northrup Z. Yang C. Knollenberg M. Teepe T. Wunderer C. L. Chua N. M. Johnson

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید