We develop a stochastic network model for charge transport simulations in amorphous organic semiconductors, which generalizes the correlated Gaussian disorder model to realistic morphologies, charge transfer rates, and site energies. The network model includes an iterative dominancecompetition model for positioning vertices (hopping sites) in space, distance-dependent distributions for the vert...

We demonstrate a novel display structure for color electronic paper for the first time. Fully transparent amorphous oxide TFT array is directly deposited onto color filter array and combined with E Ink Imaging Film. Taking advantage of the transparent property of the oxide TFT, the color filter and TFT array are positioned at the viewing side of the display. This novel “Front Drive” display str...

In this paper, the development of wafer bonding techniques of the most frequently used materials Si-to-glass, glass-to-glass and Si-to-Si is reported. To improve the bond quality of Si-to-glass and make glass-to-glass bonding viable at bonding temperatures less than 300 C, a hydrogen-free amorphous silicon layer of 20-100 nm thickness is deposited as an intermediate layer. For Si-to-glass bondi...

A semiconductor laser whose cavities are ‘‘self-formed’’ due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ;380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering hav...

Over the past twenty years, research into the applications of organic semiconductors (OSCs) has intensified rapidly. Though their electron mobility is much lower than that of typical semiconductors, OSCs show promise in low-cost, flexible, lightweight, and environmentally-friendly semiconductor applications. Their hole mobility was found to be comparable to that of amorphous silicon (a-Si), wit...

The frequency response of the photomodulated thermoreflectance (PMTR) signal has been used to characterize various semiconductor samples, including crystalline Ge/Si, ion-implanted Ge, and amorphous Si. Theoretical modelling has allowed the deconvolution of electron-hole plasmaand thermal-wave contributions to the signal throughout the entire frequency range.

B Bader Theory for charge analysis 77 Bibliography 89 Introduction The wide eeort of the past decade to understand physical properties of the semiconductor heterojunctions has provided many fundamental and applica-tive results 1, 2]. The experience acquired on simple systems like isovalent common anion heterojunctions, e.g. GaAs/AlAs, has been successfully extended to heterovalent systems and a...