a noninteracting quantum-dot arrays side coupled to a quantum wire is studied. transport through the quantum wire is investigated by using a noninteracting anderson tunneling hamiltonian. the conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. moreover, we have fo...

The shrinking MOSFET has an increasing subthreshold leakage current caused by various mechanisms. For example, the band-to-band tunneling (BTBT) current from drain to channel results in a large subthreshold leakage current in a 50nm MOSFET [1]. Recently, the double-gate (DG) fully depleted (FD) MOS was investigated. In the DG-MOS, the channel region is intrinsic or lightly doped silicon so that...

It is usually assumed that tunneling current is fairly independent of temperature. By performing an atomistic transport simulation, we show, to the contrary, that the subthreshold tunneling current in a graphene nanoribbon (GNR) band-to-band tunneling transistor (TFET) should show significant and nonlinear temperature dependence. Furthermore, the nature of this non-linearity changes as a functi...

Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that responsible for the electronic transport in devices like tunnel field effect transistors (TFETs), which hold great promise reducing subthreshold swing below Boltzmann limit. This allows scaling down operating voltage and off-state leakage current at same time, thus power consumption metal oxide semiconductor...

Abstract Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, it is difficult reach higher level electrical characteristics only combination materials based on their i...

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

The phonon-assisted band-to-band tunneling rate in crystalline silicon is calculated using the equilibrium Green's function formalism. Electron-phonon collisions, that balance the momentum, are included in the perturbation operator. Houston-type solutions are used for the time dependence of the Bloch states. RPA decoupling yields a tractable expression for the diierential tunneling conductivity...

While science has good knowledge of semiconductor bandgaps, there is not much information regarding the steepness of the band-edges. We find that a plot of absolute conductance, I/V versus voltage, V, in an Esaki diode or a backward diode will reveal a best limit for the band tails, defined by the tunneling joint density of states of the two band-edges. This joint density of states will give in...