We present a simple picture to understand the bandgap variation of any chiral carbon nanotubes with tensile and torsional strains. Using this picture, we are able to predict a simple dependence of d(Bandgap)/d(strain) on the value of (Nx −Ny) mod 3, for semiconducting tubes. We also predict a novel change in sign of d(Bandgap)/d(strain) as a function of tensile strain arising from a change in t...

Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene into the direct one. Attributed to the enthalpy decreasing linear to the oxygen ratio, partial o...

Cladding structures of photonic bandgap fibers often have airholes of noncircular shape, and, typically, close-to-hexagonal airholes with curved corners are observed. We study photonic bandgaps in such structures by aid of a two-parameter representation of the size and curvature. For the fundamental bandgap we find that the bandgap edges (the intersections with the air line) shift toward shorte...

Layered semiconductors based on transition-metal chalcogenides usually cross from indirect bandgap in the bulk limit over to direct bandgap in the quantum (2D) limit. Such a crossover can be achieved by peeling off a multilayer sample to a single layer. For exploration of physical behavior and device applications, it is much desired to reversibly modulate such crossover in a multilayer sample. ...

Elucidating the decay mechanisms of photoexcited charge carriers is key to improving the efficiency of solar cells based on organo-lead halide perovskites. Here we investigate the spectral dependence (via above-, inter- and sub-bandgap optical excitations) of direct and trap-mediated decay processes in CH3NH3PbI3 using time resolved microwave conductivity (TRMC). We find that the total end-of-p...

The layered transition metal dichalcogenides have attracted considerable interest for their unique electronic and optical properties. While the monolayer MoS2 exhibits a direct bandgap, the multilayer MoS2 is an indirect bandgap semiconductor and generally optically inactive. Here we report electric-field-induced strong electroluminescence in multilayer MoS2. We show that GaN-Al2O3-MoS2 and GaN...

A new CMOS bandgap voltage reference (BGR) is proposed and simulated using Silterra 0.13 μm CMOS technology. The proposed BGR utilizes 3 curvature-corrected current generators that compensate for the output voltage variation in an extended temperature range. The proposed circuit generates an output voltage of 1.181 V with a variation of 380 μV from !50 °C to 150 °C.

In this paper the susceptibility of integrated bandgap voltage references to Electromagnetic Interference (EMI) is investigated by on-chip measurements carried out on Kuijk and Tsividis bandgap circuits. These measurements highlight the offset in the reference voltage induced by continuous wave (CW) EMI and the complete failures which may be experienced by bandgap circuits. The role of the susc...

Tuning the bandgap in ferroelectric complex oxides is a possible route for improving the photovoltaic activity of materials. Here, we report the realization of this effect in epitaxial thin films of the ferroelectric complex oxide Bi3.25La0.75Ti3O12 (BLT) suitably doped by Fe and Co. Our study shows that Co (BLCT) doping and combined Fe, Co (BLFCT) doping lead to a reduction of the bandgap by m...