We report on a numerical study of electronic transport in chemically doped 2D graphene materials. By using ab initio calculations, a self-consistent scattering potential is derived for boron and nitrogen substitutions, and a fully quantum-mechanical Kubo-Greenwood approach is used to evaluate the resulting charge mobilities and conductivities of systems with impurity concentration ranging withi...

We study the electronic properties of graphene with a finite concentration of vacancies or other resonant scatterers by a straightforward lattice quantum Monte Carlo calculation. Taking into account a realistic long-range Coulomb interaction, we calculate the distribution of the spin density associated with midgap states and demonstrate antiferromagnetic ordering. An energy gap is open due to i...

Neoclassical implications of the strong radial electric field, inherently present in an H-mode tokamak pedestal, are considered. The main ion poloidal flow in the pedestal is predicted to be reduced in magnitude, or even reversed, compared with its core counterpart. The resulting change in the neoclassical formula for the impurity flow is shown to result in improved agreement with boron measure...

This report documents the results of experiments and analysis on the operations of Alcator C-Mod during the Fiscal Year 2005 campaign to study the effects of removing all boron-nitride protection limiters and cleaning all metal surfaces as thoroughly as possible to return the machine to conditions with all-metal plasma facing components. ICRF antenna performance, heating efficiency, disruption ...

In this study, we have performed nanoscale characterization of Si-clusters and Si-nanowires with a laser-assisted tomographic atom probe. Intrinsic and p-type silicon nanowires (SiNWs) are elaborated by chemical vapor deposition method using gold as catalyst, silane as silicon precursor, and diborane as dopant reactant. The concentration and distribution of impurity (gold) and dopant (boron) in...

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF2, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experime...

Integrated circuit device geometries require precise control of thickness and electrical properties in thin gate dielectric. This work studies the evolution of excess density generated during thermal oxidation of silicon and the properties of the resulting oxide films. This work also investigates impurity incorporation in thin oxides and its effect on boron penetration leading to changes in thr...

FT-IR spectroscopy is the basic finger-print method for qualitative and quantitative analysis of nitrogen, boron, hydrogen impurities in natural synthetic diamonds. In measurements impurity concentrations, external standard samples are required calibration procedure during analysis. this study, double-phonon mid-IR absorption coefficient optical phonons diamond host matrix, robust internal stan...

An advanced microwave plasma reactor ARDIS 300 was used to synthesize homoepitaxial structures of monocrystal diamond films at Project Center ITER. High-quality epitaxial were grown on boron-doped substrates using plasma-assisted chemical vapor deposition from methane-hydrogen mixture. Structural and impurity perfection characterized by Raman spectroscopy, photoluminescence, optical absorption....