ALD high-κ dielectrics and TiN metal-gate were successfully incorporated in both Si and Si0.7Ge0.3 surface-channel pMOSFETs. The high-κ gate dielectrics used included Al2O3 /HfAlOx /Al2O3, Al2O3 /HfO2 /Al2O3 and Al2O3. The Si transistors with Al2O3 /HfAlOx /Al2O3 showed a sub-threshold slope of 75 mV/dec. and a density of interface states of 3×10 cmeV. No obvious degradation of the Si channel h...

We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3...

Al2O3 doped Ba0.5Sr0.5TiO3 ~BST! thin films, with different Al2O3 contents, were deposited on ~100! LaAlO3 substrates by the pulsed laser deposition technique to develop agile thin films for tunable microwave device applications. The dielectric properties of Al2O3 doped BST films were determined with a nondestructive dual resonator near 7.7 GHz. We demonstrated that the Al2O3 doping plays a sig...

We have developed a compact experimental set-up for X-ray absorption fine structure (XAFS) measurements in He gas under atmospheric pressure (AP) in the soft X-ray region and used it for Mg and Cl K-edge XAFS measurements of MgCl2 and MgCl2・6H2O. The spectra of MgCl2・6H2O measured in He under AP were significantly different from those measured in vacuum. This suggests the importance of performi...

Disperse fine equiaxed α-Al2O3 nanoparticles with narrow size distribution are important materials in nanotechnology and nanomaterials, but syntheses of disperse fine equiaxed α-Al2O3 nanoparticles usually result in fine γ-Al2O3 nanoparticles or large α-Al2O3 nanoparticles larger than 15 nm. α-Al2O3 has a higher surface energy than γ-Al2O3 and becomes thermodynamically not stable with respect t...

Low temperature fabrication of Al2O3-polyimide composite substrates was carried out by an aerosol deposition process using a mixture of Al2O3 and polyimide starting powders. The microstructures and dielectric properties of the composite thick films in relation to their Al2O3 contents were characterized by X-ray diffraction analysis. As a result, the crystallite size of α-Al2O3 calculated from S...

Five monolithic catalysts with low noble metal content were prepared by immerge method (Pt/gamma-Al2O3, Pt/La-Al2O3, Pt/YSZ-Al2O3, Pt+Pd/La-Al2O3 and Pd/La-Al2O3) and their activity measurements were carried out in a conventional fixed-bed flow reactor. The results show that La-Al2O3 can promote activity of the prepared catalysts and can decrease the complete conversion temperature of cooking f...

A co-precipitation method was used for synthesis of pure MgTiO3 ceramic powder with Mg(NO3)2.6H2O, TiCl4 or C12H28O4Ti and NaOH as raw materials. In this method, solutions of 1 M, Mg (NO3)2 6H2O and 2 M, NaOH were prepared. A stoichiometric amount of Ti precursors from TiCl4 or C12H28O4Ti was weighted. Solutions of Mg (NO3)2. 6H2O and Ti precursor were added dropwise to NaOH solution unde...

By varying the ratio of the constituents, compound films can exhibit a widely tunable range of physical properties. Atomic layer deposition ~ALD! techniques are based on sequential, self-limiting surface reactions and can grow compound films. In this study, ZnO/Al2O3 alloy films were prepared using ALD techniques. By adjusting the ALD pulse sequence, the ZnO/Al2O3 alloy film composition was var...