We have developed a surface potential based compact model for the single-walled semiconductor CNT field effect transistor (CNT-FET) shown in Figure 1. Our compact modeling results for surface potential, channel charge, gate capacitance and channel current are shown in Figures 2-5 respectively. The model comparison is done using the numerical results of [1-4]. The compact model is developed for ...

Background Carbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2, 3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charg...

Copyright 2011 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. pISSN: 1229-7607 eISSN: 2092-7592 DOI: http://dx...

An innovative sensor for the detection of nerve agents in the gas phase based on a carbon nanotube field-effect transistor was developed. A high sensitivity to organophosphorus gases was obtained by modifying gold electrodes with specific tailor-made self-assembled monolayers.

Please cite the original version: Mudimela, Prasantha R. & Grigoras, Kestutis & Anoshkin, Ilya V. & Varpula, Aapo & Ermolov, Vladimir & Anisimov, Anton S. & Nasibulin, Albert G. & Novikov, Sergey & Kauppinen, Esko I. 2012. Single-Walled Carbon Nanotube Network Field Effect Transistor as a Humidity Sensor. Journal of Sensors. Volume 2012. 496546/1-7. ISSN 1687-725X (printed). DOI: 10.1155/2012/4...

We fabricated a pH-sensitive device on a glass substrate based on properties of carbon nanotubes. Nanotubes were immobilized specifically on chemically modified areas on a substrate followed by deposition of metallic source and drain electrodes on the area. Some nanotubes connected the source and drain electrodes. A top gate electrode was fabricated on an insulating layer of silane coupling age...

The aim of this paper is to design Carbon Nanotube Field Effect Transistor-based (CNTFET-based) combinational circuits with improved Power Delay Product (PDP). Ternary logic circuits have attracted substantial interest due to their capability of increasing information content per unit area. As a result, the geometry-dependent threshold voltage of CNTFETs is effectively used to design a ternary ...

Single-walled carbon nanotube field-effect transistors were fabricated using solid electrolyte (PEO plus LiClO4) as gating materials. The SWNT FETs demonstrated strong gate-channel coupling with improved device characteristics compared with back-gated devices. More importantly, the nanotubes can be easily doped using different concentrations of electron acceptor mixed in the polymer materials. ...

In this article, a new structure is presented for MOS (Metal Oxide Semiconductor)-like junctionless carbon nanotube field effect transistor (MOS-like J-CNTFET), in which dual material gate with different work-functions are used. In the aforementioned structure, the size of the gates near the source and the drain are 14 and 6 nm, respectively, and the work-functions are equal and 0.5 eV less tha...

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (I...