With the advancement of CMOS technology, the trend is to design transceivers using this technology with the aim of achieving full integration and reduced system cost. The power amplifier (PA) being one of the most important blocks of the wireless communication system is no exception. The aim of this work is to provide the study that allow the design of a singleended RF CMOS Class-E power amplif...

In this paper, power amplifier operating with center frequency of 947.5 MHz, which can be used for the transmitter in beamforming systems, is proposed. The power amplifier implemented provides high power added efficiency (PAE) of 71.967% and low noise figure (NF) as low as 1.525. The linearity of the power amplifier is improved by using square law and cubic law analog predistortion techniques. ...

Absfracr-The class E tuned power amplifier consists of a load network and a single transistor that is operated as a switch at tbe carrier frequency of tbe output signal. ‘zbe most simple type of load network consists of a capacitor shunting tbe transistor and a series-tuned output circuit, which may bave a residual reactance. Circuit operation is determined by tbe transistor when it is on, and ...

In this paper we design a low-voltage class-E power amplifier (PA) in a standard CMOS 0.35μm integrated technology, to be used in a UMTS transceiver having the following specifications: f=1.95 GHz, VDC=1 V, Pout=0.5 W. The designed class-E network accommodates the simultaneous presence of a parasitic ground inductance and losses in the switch and shunt-capacitor. The transistor is dimensioned f...

A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...

Future interferometric synthetic aperture radar (InSAR) systems require electronically scanned phased-array antennas, where the transmit/receive (T/R) module is a key component. The T/R module efficiency is a critical figure of merit and has direct implications on the power dissipation and power generation requirements of the system. Significant improvements in the efficiency of the T/R module ...

Fig.2 Amplifier under test. Amplifiers can operate in classes A, B, AB, C, D, E and F [2]. We tested class A amplifier made by „Microwave Power Devices“, Model: LWA 4690-1/1837, based on bipolar devices (Fig.2). Usually, 1dB compression point, gain and two-tone third-order intercept point are measured as the amplifier figure of merit. As specified by manufacturer, the frequency range of the amp...

This paper presented a modified low-power recovery system for implanted micro-system devices to stimulate nerves and muscles. The modified system based on ASK modulation techniques and efficient class-E power amplifier, and operated at low-frequency band 13.56 MHZ to avoid the tissue damage according to the industrial, scientific, medical (ISM) band, with low modulation index 15.6% to achieve m...