The TLZ method is a new crystal growth method which we have invented for the growth of homogeneous mixed crystals. The influence of convection in a melt on the compositional homogeneity of TLZ-grown InxGa1−xAs crystals was investigated by the growth of various diameter crystals on the ground. The results have shown that excellent compositional homogeneity is realized even on the ground if the c...

We use a new, quantum-mechanics-based bond-order potential (BOP) to reveal melt growth dynamics and fine scale defect formation mechanisms in CdTe crystals. Previous molecular dynamics simulations of semiconductors have shown qualitatively incorrect behavior due to the lack of an interatomic potential capable of predicting both crystalline growth and property trends of many transitional structu...

The Isothermal Dendritic Growth Experiment (IDGE), first performed in low-earth orbit in March of 1994 showed variation in the growth data beyond that due to measurement uncertainties, and a significant deviation from predictions of diffusive transport theory with boundary conditions at infinity. Recently, two models described in the J. Crystal Growth suggested modifications from the Ivantsov m...

Crystal morphology of melt-crystallized poly(ethylene succinate) (PES) thin film with a thickness of –100 nm was studied by atomic force microscopy (AFM). The fibril-like and wide or lozenge-shaped PES lamellar crystals under different crystallization conditions are thought to be corresponding to the crystal growth kinetics based on the secondary nucleation theory that there are two regimes of ...

A mechanism for crystal-crystal phase transformations (PTs) via surface-induced virtual premelting is justified thermodynamically and confirmed experimentally for the PTs in PbTiO3 nanofibers. When the thickness of the surface melt (which appears much below the melting temperature, especially for nanoobjects) exceeds the size of the critical product nucleus, nucleation and growth of the product...

Investigations for the melt growth gallium-antimonide (GaSb) semiconductor crystals are underway at the US Air Force Research Laboratory at Hanscom Air Force Base by the vertical gradient freeze (VGF) method utilizing a submerged heater. Electromagnetic stirring can be induced in the gallium-antimonide melt just above the crystal growth interface by applying a weak radial electric current in th...

The adsorption of antifreeze protein (AFP) molecules to the ice crystal surface during melt growth from an AFP solution results in disturbance of the growth kinetics at the surface interface. In this paper, the growth pattern related to the potential for crystal growth as well as the crystal surface topography have been studied. The crystal shape and size were found to be strongly dependent on ...