We assess the impact of cardiovascular disease (CVD) mortality on economic growth, using a dynamic panel growth regression framework taking into account potential endogeneity problems. In the worldwide sample we detect a non-linear influence of working age CVD mortality rates on growth across the per capita income scale. Splitting the sample (according to the resulting income threshold) into lo...

The shapes of as-grown/as-etched two-dimensional (2D) islands are the most recognizable features chemical vapor deposition (CVD) process which reveal a lot information about environment growth/etching, effect substrate and growth/etching kinetics. Here, we summarize experimentally observed CVD-grown 2D materials from previous reports, theoretical understanding on corresponding mechanisms simula...

CVD diamonds with NV-centers (nitrogen vacancy centers) are now considered as the most promising solidstate media for the realization of component base for quantum information processing due to the unique properties of NV-center electronic transitions, which allow initialization and read-out of it`s spin state [1]. The concentration and spin properties of NV-centers depend on nitrogen concentra...

Recently, the quality of intrinsic CVD Diamond (CVD-D) has tremendously been improved. The replacement of the previous used silicon substrates for growth by ultra-pure HPHT Single-Crystal (SC) {100}-oriented diamond provides homo-epitaxial grown material almost free of structural defects. Nevertheless, all substrates nominally {100}oriented show a certain amount of off-angle declination from th...

A combination of two methods chemical vapor deposition (CVD) diamond films, microwave plasma–assisted (MW CVD) and hot filament (HF CVD), was used for the growth 100 µm-thick polycrystalline (PCD) layers on Si substrates. The bow HF CVD MW films showed opposite convex\concave trends; thus, combined material allowed reducing overall by a factor 2–3. Using initial 25 PCD layer achieving much high...

Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional crystal growth model. Our CVD-grown multilayer MoSe2 thin-film transistors (TFTs) show p-type-dominant ambipolar behaviors, which are attributed to ...

DOI: 10.1002/adma.201501600 CVD, as well as on its quality and suitability for fl exible electronic applications. Therefore, understanding the growth and properties of graphene obtained with cold-wall CVD is imperative to enable the exploitation of this material and facilitate the birth of novel graphene-based applications. Here we report a completely new mechanism for the growth of graphene by...

The growth of graphene on Ni using a photo-thermal chemical vapour deposition (PT-CVD) technique is reported. The non-thermal equilibrium nature of the PT-CVD process resulted in a much shorter duration of the overall growth time for graphene in both the heating up and cooling down stages, thus allowing for the reduction. Despite the reduced time for synthesis compared to standard thermal chemi...

A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 ◦C with laser-ablation had significantly higher average ...