230-keV 28Si ions were implantated into Si( 100) at room temperature with doses from 1014 to 101*/cm2. The samples were analyzed by x-ray double crystal diffractometry and 2-MeV 4He ion channeling spectrometry. The implanted layer has a parallel lattice spacing equal to that of the unimplanted substrate. The perpendicular lattice spacing is larger than that of the unimplanted substrate and is p...

The propagation of defects in semiconductor heterostructures has been studied both theoretically and experimentally. The simple model shows that defects originating from lattice-matched regions can be prevented from entering, or can be trapped by, a pseudomorphic layer, depending on the signs of the strain induced by the defect and the strain in the pseudomorphic layer. A pseudomorphic layer ca...

This article details diagnostic imaging and histopathological findings from two women with Cesarean scar syndrome (CSS) who underwent hysterectomy. Patient one, a 44-year-old woman, was examined with transvaginal ultrasound (TVUS) and magnetic resonance imaging (MRI). Characteristic histological findings included a defect of the muscle layer of her Cesarean scar. Patient two, a 39-year-old woma...

This paper investigates the spectral properties of a one-dimensional photonic crystal (PC) containing an inhomogeneous polymer- dispersed liquid crystal (PDLC) as a defect layer. Experimental results indicate that the voltage-induced reorientation of LC molecules between the light-scattering and transparent states in the PDLC enables the electrical tuning of the transmittance of defect-mode pea...

Defect avoidance methods are likely to play a key role in overcoming the challenge of mask blank defects in EUV lithography. In this work, we propose a novel EUV mask defect avoidance method. It is the first approach that allows exploring all the degrees of freedom available for defect avoidance (pattern shift, rotation and mask floorplanning). We model the defect avoidance problem as a global,...