Low-frequency dielectric properties of biological tissues, characterized by αand β-dispersions, are reviewed with emphasis on physical mechanisms. Ion activities, tissue microstructure and composition are discussed. A new mechanism associated with membrane permeability is included. The counterion layer (electrical double layer) phenomenon is discussed. Electrode polarization, which always cause...

We have proposed, designed, manufactured and tested low loss dielectric micro-lenses for infrared (IR) radiation based on a dielectric metamaterial layer. This metamaterial layer was created by patterning a dielectric surface and etching to sub-micron depths. For a proof-of-concept lens demonstration, we have chosen a fine patterned array of nano-pillars with variable diameters. Gradient index ...

In this paper, a novel approach has been suggested to obtain an improved spurious-free window for dielectric resonator in microwave integrated circuit environment. In microwave integrated circuit environment, the dielectric resonator placed on a thin dielectric substrate gets located asymmetrically with respect to its shielding enclosure. A reduced separation in frequencies (mode separation) is...

The nonlinear phenomena that occur in the electric double layer (EDL) that forms at charged surfaces strongly influence electrokinetic effects, including electro-osmosis and electrophoresis. In particular, saturation effects due to either dielectric decrement or ion crowding effects are of paramount importance. Dielectric decrement significantly influences the ionic concentration in the EDL at ...

In this study we present a general approach for the analysis of the wake field of a point charge moving in a vacuum tunnel bored in dielectric material that is uniform in the direction parallel to the motion of the bunch. In the transverse direction the structure surrounding the dielectric may have arbitrary geometry. A quasianalytic expression that relates the decelerating force with the first...

Band gap blue shift of InGaAs/InP multiple quantum well (MQW) structures by impurity-free vacancy disordering (IFVD) is studied by photoluminescence (PL) and secondary ion mass spectrum (SIMS). SiO2, Si3N4, and spin on glass (SOG) were used for the dielectric layers to create the vacancies. The results indicate that the band gap blue shift varies with the different dielectric layers and depends...

In this article, three new green's functions are presented for a narrow strip line (not a thin wire) inside or on a homogeneous dielectric, supposing quasi-TEM dominant mode. These functions have no singularity in contrast to so far presented ones, so that they can be used easily to determine the capacitance matrix of multi-layer and single-layer homogeneous coupled microstrip lines. To obtain ...

We consider a two-dimensional problem of scattering of a time-harmonic electromagnetic plane wave by an infinite inhomogeneous conducting or dielectric layer at the interface between semi-infinite homogeneous dielectric half-spaces. The magnetic permeability is assumed to be a fixed positive constant. The material properties of the media are characterized completely by an index of refraction, w...

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessedgate devices with SiO2 dielectrics are observed to exhibit simultaneous trappi...