Terbium doped Y2O3 planar waveguides were fabricated by sol–gel process and dip-coating using yttrium acetate as precursor. Two different doping modes were compared, i.e. introduction in the sol of dispersed Tb3+ions from dissolved Tb(NO3)3, or of nanoparticles of Tb2O3 or [Y2O3:50% Tb] from an alcoholic suspension. The chemical and nanostructural properties were analyzed by infrared spectrosco...

Previous studies on Ga-doped ZnO nanorods (GZRs) have failed to address the change in GZR morphology with increased doping concentration. The morphology-change affects the GZR surface-to-volume ratio and the real essence of doping is not exploited for heterostructure optoelectronic characteristics. We present NH₄OH treatment to provide an optimum morphological trade-off to n-GZR/p-Si heterostru...

The doping of charge carriers into the CuO(2) planes of copper oxide Mott insulators causes a gradual destruction of antiferromagnetism and the emergence of high-temperature superconductivity. Optimal superconductivity is achieved at a doping concentration p beyond which further increases in doping cause a weakening and eventual disappearance of superconductivity. A potential explanation for th...

The possibility of reliable and reproducible p-type doping of (31 l)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4~ lOI cmB3 can be obtained under conditions of low As, flux and high ()660 “C) growth temperatu...

We study the effect of delta-doping on the hole capture probability in ten-period p-type Ge quantum dot photodetectors. The boron concentration in the delta-doping layers is varied by either passivation of a sample in a hydrogen plasma or by direct doping during the molecular beam epitaxy. The devices with a lower doping density is found to exhibit a lower capture probability and a higher photo...

The emergence of metallic conduction in layered dichalcogenide semiconductor materials by chemical doping is one of key issues for two-dimensional (2D) materials engineering. At present, doping methods for layered dichalcogenide materials have been limited to an ion intercalation between layer units or electrostatic carrier doping by electrical bias owing to the absence of appropriate substitut...

The aim of this paper is to study the effect of Mn concentration on the structural, magneticand optical properties of TiO2 nanoparticles. TiO2 nanopowders with Mn concentration of 0%,0.2%, 1% and 5% were synthesized by the sol-gel method. The structural, surface morphologyand average crystal grain size, optical, magnetic properties and chemical compounds of thesamples are studied using XRD, FE-...

High-quality Ti-doped ZnO films were grown on Si, thermally grown SiO2, and quartz substrates by atomic layer deposition (ALD) at 200°C with various Ti doping concentrations. Titanium isopropoxide, diethyl zinc, and deionized water were sources for Ti, Zn, and O, respectively. The Ti doping was then achieved by growing ZnO and TiO2 alternately. A hampered growth mode of ZnO on TiO2 layer was co...

0038-1101/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.sse.2012.05.001 ⇑ Corresponding author. E-mail addresses: [email protected], [email protected] (F We propose here a simple approximate, yet accurate, formula to easily calculate the maximum magnitude of the electric potential at the channel width’s midpoint of symmetric Double Gate (DG) MOSFETs with any arbitrary body doping...