some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

porous silicon (ps) samples have been prepared by electrochemical anodization of p-type silicon wafer by varying hf concentrations in the electrolytic solution. the structural, surface morphological, optical and surface composition analysis of the prepared samples were done by x-ray diffraction (xrd), scanning electron microscopy (sem), photoluminescence (pl) and fourier transform infrared (fti...

Introduction The dielectric constant of PCB material is important in determining the trace width required to produce a characteristic impedance of 50 ohms, or any other desired impedance. The most commonly used material, FR-4, has a dielectric constant that may vary widely between manufacturers or batches, and also varies over frequency. It is useful to have a method to determine the dielectric...

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or ‘high K’ gate oxides such as hafnium oxide and hafnium silicate. Little was know...

In this work, we investigated the stability of Molybdate-Phosphonic Acid (MPA) complex by density functionaltheory (DFT) computations in six solvents with the dielectric constant ranging from 1.92 to 10.36. The methodsare used for calculations are B3LYP and B3PW9 I that have been studied in two series of basis sets: D95nand6-31+G (d,p) for hydrogen and oxygen atoms; LANL2DZ for Mo and Phosphoru...