This paper presents 1-bit full adder cell in emerging technologies like FinFET and CNFET that operates in the moderate inversion region for energy efficiency, robustness and higher performance. The performance of the adder is improved by the optimum selection of important process parameters like oxide and fin thickness in FinFET and number of carbon nanotubes, chirality vector and pitch in CNFE...

MOS transistor play a vital role in today VLSI technology. In CMOS based design, symmetry should be followed in circuit operation. Most of the complex circuits are allowed to design in CMOS, however, there are several drawbacks present in this complementary based design. CMOS has lost its credentiality during scaling beyond 32nm. Scaling down causes severe short channel effects which are diffic...

This paper presents a hybrid CMOS-CNFET voltage controlled oscillator (VCO) with low power dissipation and linear response over a wide control voltage range. The hybrid circuit is based on PTM 32nm low power CMOS devices and 32nm CNFET devices with different threshold voltages. The VCO frequency and power dissipation are investigated for CNFET parameters such as number of nano-tubes, gate oxide...

Carbon nanotube (CNT) field-effect transistors (CNFETs), as one of the promising candidate emerging technologies, have distinctive device-level characteristics compared to conventional CMOS technology. Logical effort approach, which is an efficient approach for fast delay estimation in CMOS technology, however, is not universally applicable for CNFET-based circuits. In this work, we first ident...

Carbon nanotube (CNT) field-effect transistors (CNFETs) are a promising emerging technology projected to achieve over an order of magnitude improvement in energy-delay product, a metric of performance and energy efficiency, compared to silicon-based circuits. However, due to substantial imperfections inherent with CNTs, the promise of CNFETs has yet to be fully realized. Techniques to overcome ...

Carbon Nanotube Field Effect Transistors (CNFETs), consisting of semiconducting single-walled Carbon Nanotubes (CNTs), show great promise as extensions to silicon CMOS and in large-area electronics. While there has been significant progress at a single-device level, a major gap exists between such results and their transformation into VLSI CNFET technologies. Major CNFET technology challenges i...

This paper investigates the use of carbon nanotube field effect transistors (CNFETs) for the design of ternary full adder cells. The proposed circuits have been designed based on the unique properties of CNFETs such as having desired threshold voltages by adjusting diameter of the CNFETs gate nanotubes. The proposed circuits are examined using HSPICE simulator with the standard 32 nm CNFET tech...

Single-wall carbon nanotube field-effect transistors (CNFETs) have been shown to behave as Schottky barrier (SB) devices. It is not clear, however, what factors control the SB size. Here we present the first statistical analysis of this issue. We show that a large data set of more than 100 devices can be consistently accounted by a model that relates the on-current of a CNFET to a tunneling bar...

The present paper treats the Carbon Nanotube Field Effect Transistors (CNFETs) in terms of new development as a possible future basic element for beyond CMOS technology used in ultra high scale integration ULSI. The CNFET is studied both in physical as well as technological point of views aiming a further understanding of the limitations to high integration density. The different types of carbo...

Carbon nanotube field-effect transistors (CNFETs) are promising candidates to substitute silicon transistors. Boasting extraordinary electronic properties, CNFETs exhibit characteristics rivaling those of state-of-the-art Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). However, as any technology that is in development, CNFET fabrication process still have some imperfectio...