Principle of electroluminescence The light emission in the presented OLED is based on the formation of electron-hole-pairs within conjugated polymers with semiconducting properties. Therefore a suitable polymer like PPV (fig. 1) has to be placed between a transparent anode and a metallic cathode (fig. 2). By application of an electric voltage electrons (on the cathode side) and holes (on the an...

Excitation of surface plasmons on metallic nanoparticles has potential for increasing the absorption and emission from thin Si devices. We report an eight-fold enhancement in electroluminescence from silicon-on-insulator light-emitting diodes at 900 nm via excitation of surface plasmon resonance in silver nanoparticles, along with a redshift in the electroluminescence by 70 nm by overcoating th...

Group-IV materials for monolithic integration with silicon optoelectronic systems are being extensively studied. As a part of efforts, light emission from germanium has been pursued with the objective of evolving germanium into an efficient light source for optical communication systems. In this study, we demonstrate room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge ...

slowly or even stored at 95 °K for 8 or 16 hours 12. The ordering of this small part of the ice seems to be an almost spontaneous occurrence as the tempe­ rature is lowered to about 120 °K. A lowering of the activation energy for the movement of the defects in the neighbourhood of the dopant molecule could be the cause. It would mean that the area around a foreign molecule is quickly reorientat...

Electroluminescence of metal halide perovskites has been widely reported via the fabrication and optimization light-emitting diodes transistors. Light-emitting transistors are particularly interesting owing to additional control gate voltage on electroluminescence. In this work, design a microcavity, with defect mode that can be tuned an applied voltage, integrated transistor is shown. The opti...

This paper presents a new method of passivation control by electroluminescence (EL) in 0.15 lm AlGaN/GaN HEMT. The electroluminescence signature in one finger HEMTs (W = 1 · 100 lm), and eight fingers ones (W = 8 · 125 lm), is modified by defects located at the passivation/semiconductor interface and is characterized by a light emission along the drain contact. This abnormal emission reveals so...

Electroluminescence is observed during porous etching of n-type GaP single crystals at strongly positive potential. The emission spectra, which include a supra-bandgap contribution, are markedly different from the spectra observed under optical excitation or minority carrier injection. The current density and electroluminescence intensity show a strong potential dependence and a similar hystere...

The temporal response of the electroluminescence at the Si band gap energy from a metal–oxide– silicon ~MOS! tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley–Read–Hall ~SRH! recombination lifetimes are 18 and 25.8 ms for the rising and falling edges, respectively, and that the ratio for SRH, radiati...

Electroluminescence at 1.28mum is observed in a nanopatterned silicon test structure that has been subjected to carbon implantation followed by solid-phase epitaxial regrowth for recrystalization. The sub-bandgap luminescence comes from a di-carbon complex known as 'G center'. Enrichment of silicon with carbon atoms has been achieved in a procedure consisting of two implantations and solid-phas...

Conjugated polymers and copolymers have been known to have electroluminescent properties for a number of years. This study examines the electroluminescent properties of a particular segmented block copolymer. This copolymer uoresces quite well both in solution and as a thin lm, but a single layer organic LED made from it does not work well. I investigate the e ect of blending 1% PAN/CSA into th...