8.7.6.1 Electromigration in Encapsulated Metal Line 52 8.7.6.2 Basic Electromigration Characteristics 53 8.7.6.3 Balancing Electron Wind with Stress Gradient 55 8.7.6.4 No-Voiding Condition for Encapsulated Line 56 8.7.6.5 Saturated Void Volume (SVV) 57 8.7.6.6 Experimental Determination of Z ; DaðT T0Þ; B; and D 58 8.7.6.7 No-Extrusion Condition for Encapsulated Line 59 8.7.6.8 The Immortal In...

A compact model for early electromigration failures in copper dual-damascene interconnects is proposed. The model is based on the combination of a complete void nucleation model together with a simple mechanism of slit void growth under the via. It is demonstrated that the early electromigration lifetime is well described by a simple analytical expression, from where a statistical distribution ...

Electromigration is one of the most important reliability issues in semiconductor technology. Its complex character demands comprehensive physical modeling as basis for analysis. Simulation of electromigration induced interconnect failure focuses on the life-cycle of intrinsic voids, which consists of two distinct phases: void nucleation and void evolution. We present models for both phases as ...

Experimental damage mechanics of flip chip solder joints under current stressing is studied using 20 test vehicle flip chip modules. Three different failure modes are observed. The dominant damage mechanism is caused by the combined effect of electromigration and thermomigration, where void nucleation and growth lead to the ultimate failure of the module. It is observed that thermomigration dri...

In this test setup, embedded die surface temperature sensors are used to assess device electromigration performance using a high precision, high density, resistance measurement system. Solder bump failures are found to result from voiding at the UBM/solder interface where CuSn intermetallic formation and vacancy pileup are observed. The driving mechanisms for electromigration induced voiding ar...