Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-...

Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Role of oxy...

Certain bactericidal antibiotics target mitochondrial components and, due to the leakage of electrons from the electron transport chain, one-electron reduction might occur that can lead to intermediates passing the electron to suitable acceptors. This study aimed at investigating the one-electron reduction mechanism of selected penicillin derivatives using pulse radiolysis techniques. Penicilli...

In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative (VGS) bias stress. Device transfer transconductance, output, gate-leakage were studied in detail, before after each VGS We found that gradual electrical parameters, such as threshold voltage (VTH) shift, on-state resis...

BACKGROUND Vascular leakage has been proven to play a critical role in the incidence and development of explosive pulmonary barotrauma. Quantitatively investigated in the present study was the severity of vascular leakage in a gradient blast injury series, as well as ultrastructural evidence relating to pulmonary vascular leakage. METHODS One hundred adult male New Zealand white rabbits were ...

Impact of reverse-bias stress on the reliability of AlGaN/GaN high electron mobility transistors was investigated in this paper. We found that inverse piezoelectric effect could induce noisy characteristics of stress current, and the ‘‘critical voltage’’ increased with the drain–source bias in the step-stress experiments. Although the degradation of the gate leakage current and drain-to-source ...

AlGaN/GaN high electron mobility transistors (HEMTs) represent a rapidly maturing technology plagued by reliability issues which are not well understood. One such issue is the relationship between gate leakage and the formation of reaction-based defects at the interface between the gate metal and the underlying epitaxial semiconductor layers. Here, the combination of chemical etching-based depr...

This is a review on our 10 selected publications listed in the reference. The purpose of the review is further understanding the biomedical meanings of the electron leakage of mitochondrial respiratory chain and call for attention to “Chi” (see Douglas C. Wallace: Mitochondria as “chi”. http://www.genetics.org/ content/179/2/727.short). “Chi” is a Chinese character used by Chinese doctor to des...

Maintenance of redox balance is essential for normal cellular functions. Any perturbation in this balance due to increased reactive oxygen species (ROS) leads to oxidative stress and may lead to cell dysfunction/damage/death. Mitochondria are responsible for the majority of cellular ROS production secondary to electron leakage as a consequence of respiration. Furthermore, electron leakage by th...