نتایج جستجو برای: electron lifetime
تعداد نتایج: 359790 فیلتر نتایج به سال:
Injection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture cross sections of the acceptor level of iron–boron pairs in silicon. The relative populations of iron–boron pairs and interstitial iron were varied by exposing the samples to different levels of illumination pri...
%'e calculate the lifetime of a nonequilibrium electron in the first excited subband in the lowdensity heterostructure where this photocreated carrier occurs at the last stage of its cooling. The electron interaction with acoustic phonons gives the dominant intersubband relaxation mechanism, if the intersubband energy splitting and the Fermi energy splitting are relatively small, 1 ) e&/Azo ) 0...
We studied the possibility of the high brightness operation of the NewSUBARU electron storage ring without lattice modification. By turning-off the RF shaker that is used to enlarge the vertical size and the lifetime of stored electron beams, the brightness can be improved 2.7 times assuming that the stored current is the same. As the lifetime decreases, the top-up current is also reduced due t...
3 Electron Cooling 8 3.1 RHIC performance at top energy, without cooling . . . . . . . . . . . . . . . . . . . . . . 9 3.2 RHIC performance at top energy, with electron cooling . . . . . . . . . . . . . . . . . . . 9 3.3 The recombination and lifetime of ions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3.4 Collision losses . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Achieving long lifetimes is a major concern for all third generation light sources, even for high energy rings like the APS (7 GeV) or the ESRF (6 GeV). Due to the small electron transverse dimensions and the trend towards small gap undulator vacuum vessels, Touschek scattering and gas scattering make signficant contributions to the lifetime reduction. Taking action to improve the lifetime ther...
The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer t...
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