نتایج جستجو برای: elemental semiconductor
تعداد نتایج: 81599 فیلتر نتایج به سال:
An application of scanning Auger microscopy with ion etching technique and effective compensation of thermal drift of the surface analyzed area is proposed for direct local study of composition distribution in the bulk of single nanoislands. For GexSi1 - x-nanoislands obtained by MBE of Ge on Si-substrate gigantic interdiffusion mixing takes place both in the open and capped nanostructures. Lat...
The application of pressure to elemental bismuth reduces its conduction-valence band overlap, and results in a semimetal-semiconductor (SMSC) transition around 25 kbar. This transition is nominally of the topological "Lifshitz" Fermi surface variety, but there are open questions about the role of interactions at low charge densities. Using a novel pressure cell with optical access, we have perf...
Ca12Al14O33 (C12A7, 12CaO·7Al2O3, or [Ca12Al14O32]:O) is a material with a clathrate cage framework, positively charged and stabilized by anions occluded within 17% of the cages. The occluded anion is modular and can be elemental, polyatomic, and electronic in nature. This review focuses on the electride C12A7 ([Ca24Al28O64] :(4 ∗ ∂)e−(2− ∂)O2−), where O2− anions are replaced with electrons, an...
Different elemental dislocation mechanisms are considered and we try to highlight their special behaviour in relation to the layer geometry. The nucleation of misfit dislocations is the first step, we show here that the mechanism proposed by Matthews et al. can actually be observed in low misfit systems. The development of dislocations is then studied and we underline some particular problems w...
Current state-of-the-art epitaxial growth techniques employ various metalorganic and hydride gases to deliver constituent species to the substrate surface, particularly high vapor pressure species such as phosphorus and sulfur. Gas source molecular beam epitaxy (GSMBE) utilizes hydride gas sources and solid elemental sources. The more conventional growth approach, molecular beam epitaxy (MBE), ...
The title compound was obtained by arc melting o f the elemental components and subse quent annealing in a high frequency furnace. It crystallizes with the orthorhombic space group Cmmm, a = 779.26(7) pm, b = 1362.0(1) pm, c = 320.62(3) pm, V = 0.3403 nm3, Z 2. The structure was determined from single-crystal X-ray data and refined to a residual o f R = 0.021 (692 F values and 21 variables). I...
Zincand silver-doped mullite ceramic discs were prepared and tested as potentially resistant materials against bacterial adhesion and biofilm formation. Elemental analysis and X-ray diffraction studies showed that zinc ions were incorporated in the structural framework of the mullite, while silver ions remained outside the mullite crystal lattice, which allowed their slow (0.02 ppm/24 hours) le...
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