We report a simple, clean, and highly anisotropic hydrogen etching method for chemical vapor deposited (CVD) graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 °C, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent. Compared ...

OBJECTIVE The purpose of this study was to evaluate the effect of casein phosphopeptide amorphous calcium phosphate (CPP-ACP) on the shear bond strength (SBS) of brackets bonded to non-demineralized teeth with either phosphoric acid etching or self-etching primer. METHODS Sixty human premolars were randomly assigned to 1 of 4 treatment groups (n = 15 each): phosphoric acid etching (group 1); ...

Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a cert...

Solid-state nanopore has captured the attention of many researchers due to its characteristic of nanoscale. Now, different fabrication methods have been reported, which can be summarized into two broad categories: "top-down" etching technology and "bottom-up" shrinkage technology. Ion track etching method, mask etching method chemical solution etching method, and high-energy particle etching an...

The synchrotron radiation (SR) stimulated etching of silicon elastomer polydimethylsiloxane (PDMS) using XeF(2) as an etching gas has been demonstrated. An etching system with differential pumps and two parabolic focusing mirrors was constructed to perform the etching. The PDMS was found to be effectively etched by the SR irradiation under the XeF(2) gas flow, and the etching process was area-s...

In this paper, a new lead-free piezoelectric (K,Na)NbO3 (KNN) film is presented as a promising, environment-friendly alternative to the conventional piezoelectric thin film materials like PZT, etc. with regard to applying into piezo-MEMS devices in general and micro-energy-harvesting devices in particular. The KNN films deposited by the RF magnetron sputtering deposition system were revealed ex...

High speed directional etching of non conventional materials like Quartz, Lithium Niobate and Lead Titanate is still insufficiently developed for producing high aspect ratio microstructures. Compared to deep silicon etching, the plasma etching of these materials has suffered from limitations in achievable depth, aspect ratio, verticality and smoothness of surfaces. Deep etching with nearly vert...

The realization of flat surfaces on the angstrom scale is required in advanced devices to avoid loss due to carrier (electron and/or photon) scattering. In this work, we have developed a new surface flattening method that involves near-field etching, where optical near-fields (ONFs) act to dissociate the molecules. ONFs selectively generated at the apex of protrusions on the surface selectively...

Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full...

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were in...