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The tremendous growth of communications systems in recent years has put a demand on the electronics industry to provide higher speed integrated circuits than are currently available with today's silicon technology. To help meet this demand, the electronics industry is developing new semiconductor materials such as gallium arsenide which already report clock frequencies of 1-3 GHz in GaAs integr...

InAs quantum dots embedded in InGaAs quantum well (DWELL: dots-in-the-well) structures grown on nanopatterned GaAs pyramids and planar GaAs(001) surface are comparatively investigated. Photoluminescence (PL) measurements demonstrate that the DWELL structure grown on the GaAs pyramids exhibits a broad quantum well PL band (full width at half-maximum ∼ 90 meV) and a higher quantum dot emission ef...

Photoreflectance has been used to study the electronic behavior of the ambient ~100! GaAs surface and its modification by etching in a Cl2 /Ar plasma generated by an electron-cyclotron resonance ~ECR! source. We observed two pinning positions for ambient ~100! GaAs, with n-GaAs pinning near midgap and p-GaAs pinning near the valance band. ECR etching shifts the Fermi level of p-GaAs toward midg...

10 nanolasers and LED applications. 11 GaAs nanostructures (e.g., nanowires and 12 nanosheets) with high surface-to-volume 13 ratios, however, suffer from high surface 14 state densities and high surface recombina15 tion velocities, which typically limit their 16 optoelectronic device performance. Passiva17 tion of GaAs nanostructures has been widely 18 studied in the literature, including clad...

GaAs metal-oxide-semiconductor devices historically suffer from Fermi-level pinning, which is mainly due to the high trap density of states at the oxide/GaAs interface. In this work, we present a new way of passivating the interface trap states by growing an epitaxial layer of high-k dielectric oxide, La(2-x)Y(x)O(3), on GaAs(111)A. High-quality epitaxial La(2-x)Y(x)O(3) thin films are achieved...

Abstract—This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silva...

Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region ~220–250 °C!...

We studied the THz emission from n-GaAs plasmon emitters modified by low-temperature-grown ~LT! GaAs surface layers. The THz emission is increased since the LT GaAs pins the Fermi level at a midgap position, increasing the surface depletion field. For a THz emitter with a 70-nm-thick LT GaAs layer we observe without external fields a THz emission intensity of 140 nW. In addition, the long-term ...

InAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100), GaAs (100) with a 2 misorientation angle towards [01-1], and GaAs (n11)B (n = 9, 7, 5) substrates. While the substrate misorientation angle increased from 0 to 15.8 , a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-reso...