We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the relat...

The effect of surface-roughness scattering on electron transport properties in extremely thin double gate silicon-on-insulator inversion layers has been analyzed. It is shown that if the silicon layer is thin enough the presence of two Si–SiO2 interfaces plays a key role, even for a very low transverse effective field, where surface-roughness scattering is already noticeable, contrary to what h...

SOI (silicon-on-insulator) technology suffers from a number of floating body effects, most notably parasitic bipolar and history effects. These are influenced by the rapidly increasing gate tunneling current caused by an ultra-thin gate oxide, even at scaled VDDs [8]. This paper analyzes these effects in detail and proposes a number of novel circuit styles to minimize them. Simulation results a...

We study the hysteresis and bias-temperature instabilities in single-layer MoS2 FETs with SiO2 and hBN gate insulators and attempt to capture the correlation between these phenomena. In agreement with previous literature reports, our results show that the use of hBN as a gate insulator reduces the hysteresis. Furthermore, we show that the impact of the biastemperature instabilities is weaker fo...

Ultrathin (approximately three quintuple layer) field-effect transistors (FETs) of topological insulator Bi(2)Se(3) are prepared by mechanical exfoliation on 300 nm SiO(2)/Si susbtrates. Temperature- and gate-voltage-dependent conductance measurements show that ultrathin Bi(2)Se(3) FETs are n-type and have a clear OFF state at negative gate voltage, with activated temperature-dependent conducta...

In this paper, we extract the mobility of ultra-thin, body buried oxide and fully depleted silicon-on-insulator MOSFET, for different front and back-gate configurations. The mobility values are found by using the Capacitance Gate Voltage and Current Gate Voltage characteristics. In addition, the maximum electron mobility is calculated for both configurations: SiON/Si (front-gate) and SiO2/Si (b...

A long narrow gate across a fractional quantum Hall fluid at filling n51/m with odd integer m , creates a one-dimensional ~1D! system that is isomorphic to a disordered 1D electron gas with attractive interactions. By varying the gate potential along such a line junction, it should be possible to tune through the 1D localization transition, predicted for an attractively interacting electron gas...

The interplay between topological protection and broken time reversal symmetry in topological insulators may lead to highly unconventional magnetoresistance behaviour that can find unique applications in magnetic sensing and data storage. However, the magnetoresistance of topological insulators with spontaneously broken time reversal symmetry is still poorly understood. In this work, we investi...

To fabricate high-performance GaN MIS-HEMTs, we have employed a novel SiNx/HfO2 dual gate insulator. A PEALD technique was used for very thin high quality SiNx (5 nm) as an interfacial layer, followed by RFsputtered HfO2 as a high-k dielectric for the second gate insulator structure. As a result, we have achieved excellent characteristics such as small subthreshold slope of 85 mV/dec, extremely...

We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measureme...