The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon-emitter NPN bipolar transistors have been examined. Forward Gummel plots, base-emitter (BE) diode characteristics, and stress currents were measured during reverse BE bias stress. Fluorinated devices behave similarly under stress to nonfluorinated devices retaining the initial improvement observed i...

In its most widespread, classical formulation, the Nernst–Planck– Poisson system for ion transport in electrolytes fails to take into account finite ion sizes. As a consequence, it predicts unphysically high ion concentrations near electrode surfaces. Historical and recent approaches to an approriate modification of the model are able to fix this problem. Several appropriate formulations are co...

voltages and currents are induced into electronic circuit boards as electromagnetic waves are radiated on them. the strength of induction depends on the wavefront and the circuit board characteristics. in this paper, by solving maxwell’s equations using fdtd method and then by extending it by three dimensional simulation using the gpml criteria for boundary conditions and tf/sf technique, effec...

We introduce a family of various finite volume discretization schemes for the Fokker–Planck operator, which are characterized by different Stolarsky weight functions on edges. This particularly includes well-established Scharfetter–Gummel as well recently developed square-root approximation (SQRA) scheme. motivate this discretizations both from numerical and modeling point view provide uniform ...

An efficient numerical solution scheme based on a new generalized finite difference discretization and iterative strategies is developed for submicron semiconductor devices. As a representative model we consider a non-parabolic hydrodynamic system. The discretization is formulated in a mapped reference domain, and incorporates a transformed Scharfetter-Gummel treatment for the current density a...

This paper examines formulation of the discretization schemes for diffusion process simulation that allow coarse grid spacings in the areas of exponentially varying concentrations and fluxes. The method of integral identities is used as a common framework for exponential fitting of both the finite difference and finite element schemes. An exponentially fitted finite difference scheme, with disc...

In this paper, we study the large–time behavior of a numerical scheme discretizing drift– diffusion systems for semiconductors. The numerical method is finite volume in space, implicit in time, and the numerical fluxes are a generalization of the classical Scharfetter– Gummel scheme which allows to consider both linear or nonlinear pressure laws. We study the convergence of approximate solution...

An adaptive mesh refuiement scheme and data shucture has been developed in conjunction with a streamline upwind Petrov-Galerkin finite element formulation for anaiysis of the semiconductor device equations. The nonlinear elecaostatic potential equation and convection dorninated camier current continuity equations are iteratively decoupled in the solution algorithm. Incremental continuation is e...

The approximate solution of the Boltzmann transport equation via Galerkin-type series expansion methods leads to a system of first order differential equations in space and time for the expansion coefficients. This system is extremely stiff close to the fluid dynamical regime (for small Knudsen numbers), and exhibits a mildly dispersive behavior, due to the acceleration of waves by the external...

This paper explains the development of physical model Heterojunction Bipolar Transistor (HBT) and characterizes its performance as an optoelectronic mixer (OEM). HBT has been identified as a suitable device to be implemented in optoelectronic mixers by simultaneously photodetecting an intensity modulated laser beam at 1550nm and frequency translating the detected signal to a higher or lower fre...