A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction double-heterojunction enhance breakdown voltage (BV). Compared with inherent capability of conventional (Con. HEMT), built-in SBD exhibits a low turn-on (VRT) its VRT independent threshold gate bias. At off-state, ...

0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.09.033 ⇑ Corresponding author. Tel.: +91 11 24115580; fax E-mail addresses: [email protected] ( (R.S. Gupta). 1 Tel.: +91 11 24115580; fax: +91 11 24110606. In the work proposed, linearity performance of dual material gate (DMG) AlGaN/GaN HEMT has been analyzed and compared with the corresponding performance o...

0038-1101/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.sse.2010.06.008 * Corresponding author. E-mail address: [email protected] A novel device design for enhancement mode operation of III-nitride high electron mobility transistor (HEMT) structure has been proposed and demonstrated. The proposed HEMT device structure consists of a multi-heterojunction (SiO2/AlxGa1 xN/GaN/A...

The high electron mobility transistors (HEMT’s) in general and AlGaAs/GaAs/AlGaAs dualheterojunction high electron mobility transistors (DHHEMT) specifically have been studied in this paper. These devices show superior characteristics over other types of FET’s for high frequency microwave power applications. The structure of a heterojunction have been discussed followed by two and multiple-chan...

A single stage wideband amplifier based on an AlGaN/GaN HEMT power cell with a total gate-width of 16 mm matched to 50 Ohm has been successfully developed and characterized by use of a single-carrier W-CDMA signal. A very wide bandwidth of more than 1.7 GHz covering several mobile radio frequency bands within Land S-band with peak output power levels up to 44 dBm has been demonstrated with meet...

We present surface properties of buffer films (AIN and GaN) and Al0.3Gao.zN/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)-AIN buffer/Al2O3 substrate and Al2O3 substrate. We have found that the GaN surface morphology is step-flow in character and the density of dislocations was about 10(8)-10(9) cm(-2). The AFM measurements a...

1. Introduction With the diversifying functions and increasing traffic of recent satellite communications, the amplifiers installed in satellites must provide higher power and improved efficiency. Commonly-used satellite-mounted amplifiers are, in general, either traveling wave tube amplifiers (TWTAs) or solid state power amplifiers (SSPAs) using gallium arsenide field-effect transistors (GaAs ...

A promising candidate for the next generation of microwave power devices, AlGaN/GaN HEMT has aroused numerous research interests due to its inherent high power characteristic. It has been studied intensively as high power microwave devices for satellite communication systems and in recent years, many GaN-based HEMTs have been reported for power amplification applications at Ka-band [13]. High g...

Microwave power transistors play key role in today‟s wireless communication, necessary for virtually all major aspects of human activities from entertainment, business to military. HEMT is widely used due to its high speed and power amplification capabilities. The paper proposes a current Model for short channel HEMT to evaluate its sensitivity to illumination to find its application in optical...