نتایج جستجو برای: heterojunction field
تعداد نتایج: 793018 فیلتر نتایج به سال:
We have demonstrated a heterojunction bipolar transistor using a novel compound collector (CCHBT) design that allows a low-knee voltage and high-breakdown voltage to be obtained simultaneously. The novel aspect of this design is to use a short wide band-gap collector only over a narrow portion of the collector, where the field is highest. This allows support of high fields while maintaining a l...
The possibility of reliable and reproducible p-type doping of (31 l)A GaAs by Si during molecular-beam epitaxial growth and the application of such doping in the realization of high-performance electronic devices have been investigated. It is seen that p-type doping upto a free hole concentration of 4~ lOI cmB3 can be obtained under conditions of low As, flux and high ()660 “C) growth temperatu...
Due to large polarization effects, two-dimensional electron gas (2DEG) concentrations higher than 1x10 cm can be produced at the AlN/GaN heterojunction with AlN barriers as thin as 2 nm. This ultra-shallow channel together with the wide bandgap of AlN (6.2 eV) makes AlN/GaN heterojunction field effect transistors (HFET) extremely attractive for high frequency (>100 GHz) high power applications....
Despite numerous organic semiconducting materials synthesized for organic photovoltaics in the past decade, fullerenes are widely used as electron acceptors in highly efficient bulk-heterojunction solar cells. None of the non-fullerene bulk heterojunction solar cells have achieved efficiencies as high as fullerene-based solar cells. Design principles for fullerene-free acceptors remain unclear ...
Heterojunction Si-Ge nanowires (NWs) have potential applications such as field effect transistors [1]. Knowledge of the active dopant concentration and distribution, and resultant built-in potential across the Si-Ge p-n junction under biasing conditions is important for improving device performance. Off-axis electron holography is an effective method to measure electrostatic potential with nano...
The diagrammatic summary of the suggested multiscale modeling approach and its steps is presented in Figure S1. All the details of the UFF force fields [1–3] used for P3HT, P3BT, and PCBM molecules can be found in Tables S1 and S2, respectively, while numerical labels of all the interaction sites can be identified from Figure S2. Plots of 1D-RDFs of selected interaction sites are displayed in F...
A new control mechanism for the exchange bias effect in magnetic heterostructures is proposed. It takes advantage of the magnetoelectric effect which takes place in the antiferromagnetic pinning layer. In contrast with the pioneering AC measurements of the magnetoelectric effect, we investigate the magnetic response of the prototypical magnetoelectric compound Cr2O3 on static electric fields. T...
Related Articles Off-state breakdown and dispersion optimization in AlGaN/GaN heterojunction field-effect transistors utilizing carbon doped buffer Appl. Phys. Lett. 100, 223502 (2012) Charge transport and trap characterization in individual GaSb nanowires J. Appl. Phys. 111, 104515 (2012) The asymmetrical degradation behavior on drain bias stress under illumination for InGaZnO thin film transi...
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