Framework this paper we discussed an approach to manufacture a multiemitter heterotransistor. The introduced approach is a branch of recently introduced approach and based on doping by diffusion or by ion implantation of required part of heterostructure and optimization of dopant and/or radiation defects. The heterostructure should has special configuration.

Articles you may be interested in Graphene based field effect transistor for the detection of ammonia Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors Appl.

PMOS and NMOS mobility characteristics of the dual channel (strained Si/strained Ge) heterostructure have been reviewed. It is shown that the dual channel heterostructure can provide substantially enhanced mobilities for both electrons and holes. However, germanium interdiffusion from the germanium rich buried layer into the underlying buffer layer could potentially reduce the hole mobility enh...

We report synthesis of a novel metal-semiconductor heterostructure, in which AuAg alloy nanoparticles locate at Ag2S quantum tube tips. Ag2S quantum tubes have ultrathin walls below 1 nm thickness. The formation mechanism, UV-vis, luminescence and photoelectrochemical activity of the prepared heterostructure were further studied.

Aligned CuO nanowires (NWs) were synthesized by a simple cost-effective oxidation method. They act as cores; high density CuO/ZnO core/shell heterostructure NWs were fabricated by thermal decomposition. Using the core/shell heterostructure NWs as a photoelectrode, a 0.71% photo-to-hydrogen conversion efficiency was obtained from photoelectrochemical water decomposition.

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...

In contemporary research, “Heterostructure” assemblies play an important role in energy conversion systems, wherein the composite assemblies facilitate faster charge carrier transport across the material interfaces. The improved/enhanced efficiency metrics in these systems (electro/photo-electrochemical processes/devices) is due to synergistic interaction and synchronized charge transport a...

Both radiative and nonradiative processes which occur in the active region of GaInAs–GaInAsP–InP asymmetric multiple quantum-well (AMQW) heterolasers with two quantum wells of different width (4 and 9 nm) are described. Several possible processes of non-radiative Auger recombination which affect the temperature sensitivity of the lasing threshold are analyzed and the temperature dependencies of...

Articles you may be interested in Publisher's Note: " High-voltage field effect transistors with wide-bandgap-Ga2O3 nanomembranes " [Appl. Phys. Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors Appl. Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors Appl. Two-channe...