نتایج جستجو برای: hfet
تعداد نتایج: 80 فیلتر نتایج به سال:
Protein detection using biologically or immunologically modified field-effect transistors (bio/immunoFETs) depends on the nanoscale structure of the polymer/protein film at sensor interfaces (Bhushan 2010 Springer Handbook of Nanotechnology 3rd edn (Heidelberg: Springer); Gupta et al 2010 The effect of interface modification on bioFET sensitivity, submitted). AlGaN-based HFETs (heterojunction F...
We have carried out an experimental study exploring both impact ionization and electron transport in InAlAs/n+-InP HFET’s. Our devices show no signature of impact ionization in the gate current, which remains below 17 p ” m under typical bias conditions for L, = 0.8 pm devices (60 t i e s lower than for InAlASnnGaAs HEMT’s). The lack of impact ionization results in a drain-source breakdown volt...
Current collapse effects in an Al0.25Ga0.75N/GaN HFET have been investigated under pulsed bias conditions, and a detailed investigation of current responses to changes in drain or gate bias voltage (drain-lag and gate-lag, respectively) has been performed. Three components of transient current response to changes in drain and gate bias voltages are distinguished. Surface treatment using KOH etc...
In this work a modular low cost RF-amplifier system is presented, based on AlGaN/GaN-HFETs on 111-Si, hybrid integrated on PCB, consisting of single stage and balanced amplifier modules. 50 Ohm matching of the modules is realized with the use of commercial available SMDcomponents, allowing to cascade the individual modules. Depending on the setup of the system, either the total RFoutput power o...
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