This paper analyzes in detail the Fringing Induced Barrier Lowering (FIBL) in MOS transistors with high-K gate dielectrics using two-dimensional device simulations. We found that the device short channel performance is degraded with increase in gate dielectric permittivity(Kgate) due to an increase in the dielectric physical thickness to channel length ratio. For Kgate greater than Ksi, we obse...

A novel organic-inorganic hybrid layered perovskite-type compound of the general formula A2BX4, bis(IBA)tetrabromolead(II) (1, IBA = isobutyl-ammonium cation), has been successfully synthesized and grown as flake-like crystals, and undergoes two reversible solid-state phase transitions at 315 K and 250 K, and has been systematically characterized using differential scanning calorimetry measurem...

Articles you may be interested in O 3-based atomic layer deposition of hexagonal La 2 O 3 films on Si(100) and Ge(100) substrates Atomic layer deposition of La x Zr 1 − x O 2 − δ (x = 0.25) high-k dielectrics for advanced gate stacks Appl. Suppressed growth of unstable low-k Ge O x interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor Appl....

Ti1-xSixO2 dielectric thin films were prepared by cosputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenk...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

A probing technique to obtain the energy distribution of positive charges in high-k gate stack dielectrics, both within and beyond the substrate bandgap, has been proposed. The energy distribution of different high-k devices has been investigated and attention has been paid to their differences from the single-layered SiON devices. The results obtained from the technique demonstrate the existen...

Influence of dielectric materials as gate oxide on various short channel device parameters using a 2-D device simulator has been studied in this paper. It is found that the use of high-k dielectrics directly on the silicon wafer would degrade the performance. This degradation is mainly due to the fringing field effect developed from gate to source/drain. This fringing field will further generat...

Two-dimensional (2D) materials such as graphene and MoS2 have numerous applications for future electronic and photonic systems. Their extreme surface sensitivity suggests that their response to ionizing radiation will be very dependent upon the details of the surrounding dielectric structure. In this work we describe results and new methodologies for characterizing the radiation response of gra...