Smooth and aligned single walled carbon nanotube (SWNT) thin films with improved optoelectronic performance are fabricated using a superacid slide casting method. Deposition of as made SWNT thin film on silicon (Si) together with post treatments result in SWNT/Si hybrid solar cells with unprecedented high fill factor of 73.8%, low ideality factor of 1.08 as well as overall dry cell power conver...

a numerical framework has been proposed to model the interacting effects of mixture non-ideality and mass transfer on hydrodynamics of a multiphase system using cfd methods.mass transfer during condensation and vaporization is modeled by chemical potential at the liquid-vapor interface. species mass transfers are related to the diffusion at the interface which in turn is related to the concentr...

Ohmic and Schottky contacts are playing a major role in the field of ZnO based electronics device fabrication. It is seen that several works have been reported on metallization scheme, contacts with this semiconducting material. But, the thickness of semiconducting material and the choosing of substrate still remain imperfect and inefficient for advanced IC technology. To estimate contact resis...

The ability to achieve near lossless coupling between a waveguide and a resonator is fundamental to many quantum-optical studies as well as to practical applications of such structures. The nature of loss at the junction is described by a figure of merit called ideality. It is shown here that under appropriate conditions ideality in excess of 99.97% is possible using fiber-taper coupling to hig...

cdse nanostructures were synthesized by using green chemical route as starch was used as capping agent. xrd, hr-tem, sead, uv and pl studies were made for structural and optical properties of the prepared sample. film morphology and the thickness measurement of n-cdse were carried out with afm analysis. i-v characteristics curve of this junction confirmed the formation of schottky contact betwe...

The current-voltage characteristics of Au/n-Si Schottky barrier diodes were measured in a wide temperature range of 70-310 K. The forward current-voltage characteristics have been analyzed on the basis of standard thermionic emission (TE) theory and assuming Gaussian distribution (single) of barrier height. Findings are investigated to explore TFE-mechanism with high value of characteristic ene...