نتایج جستجو برای: impurities transport
تعداد نتایج: 284201 فیلتر نتایج به سال:
We derive the ratio of transport and single-particle relaxation times in threeand two-dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times due to randomly placed charged impurities. We find that the ratio is larger than the case of ionized impurity scattering in both threeand two-dimensional electro...
We propose the second-order response of metals in an electric field induced by magnetic impurities which locally break inversion symmetry. The with toroidal moments scatter conduction electrons presence spin–orbit coupling, leading to nonreciprocal response. This mechanism is ubiquitous when a impurity placed off center such as interstitial site and surface two-dimensional system.
The Wigner distribution function formalism is applied to the description of transport properties of spintronic multilayer nanodevice. The central layer of the nanodevice is doped with magnetic impurities. The current-voltage characteristics and the spin polarisation of current are calculated.
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We study transport properties of graphene with anisotropically distributed on-site impurities (adatoms) that are randomly placed on every third line drawn along carbon bonds. We show that stripe states characterized by strongly suppressed backscattering are formed in this model in the direction of the lines. The system reveals Lévy-flight transport in the stripe direction such that the correspo...
In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Fu...
Three-dimensional (3D) topological insulator (TI) has been conjectured as an emerging material to replace copper (Cu) as an interconnect material because of the suppression of elastic scattering from doping and charge impurities for carrier transport on TI surface. We, therefore via full real-space simulation, examine the feasibility of using thin 3D-TI (Bi2Se3) wire for the local electrical in...
By presenting linear and nonlinear gyrokinetic studies, based on a balanced neutral beam injection deuterium discharge from the DIII-D tokamak, we demonstrate that impurities alter the scaling of the transport on the charge and mass of the main species, and even more importantly, they can dramatically change the energy transport even in relatively small quantities. A poloidally varying equilibr...
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