نتایج جستجو برای: indium

تعداد نتایج: 8223  

2014
Cheol Hong Lim Jeong-Hee Han Hae-Won Cho Mingu Kang

OBJECTIVES The use of indium compounds, especially those of small size, for the production of semiconductors, liquid-crystal panels, etc., has increased recently. However, the role of particle size or the chemical composition of indium compounds in their toxicity and distribution in the body has not been sufficiently investigated. Therefore, the aim of this study was to examine the effects of p...

Journal: :international journal of bio-inorganic hybrid nanomaterials 0

in this paper, indium tin oxide (ito) nanoparticles has been prepared by chemical methods under given conditions with solution of indium chloride (incl3·4h2o), tin chloride (sncl4·5h2o) in ammonia solution. the samples were characterized by x-ray diffraction (xrd) and scanning electron microscopy (sem) analyses after heat treatments. the sem results showed that, the size of the ito particles pr...

Journal: :Chemical communications 2011
Ilja Peckermann Gerhard Raabe Thomas P Spaniol Jun Okuda

Allyl and 2-methylallyl indium compounds were prepared by salt metathesis starting from indium trichloride and a Grignard reagent. They are highly fluxional in solution and reveal coordination numbers of the indium atoms of four and five in the solid state.

Journal: :Physical chemistry chemical physics : PCCP 2015
Anu George Harish K Choudhary Biswarup Satpati Sukhendu Mandal

Unlike silver and gold, indium has material properties that enable strong resonances extended up to the ultraviolet. This extended response, combined with low cost, and ease of synthesis process, makes indium a highly promising material for applications. In this work, we have synthesized ligand-protected indium nanoparticles by a metal reduction method. Powder X-ray diffraction and EDX analyses...

2015
Jun Tae Jang Jozeph Park Byung Du Ahn Dong Myong Kim Sung-Jin Choi Hyun-Suk Kim Dae Hwan Kim

Articles you may be interested in Asymmetrical degradation behaviors in amorphous InGaZnO thin-film transistors under various gate and drain bias stresses Investigation on the negative bias illumination stress-induced instability of amorphous indium-tin-zinc-oxide thin film transistors Appl. Temperature dependence of negative bias under illumination stress and recovery in amorphous indium galli...

2001
Huajie Chen Randall M. Feenstra J. E. Northrup David W. Greve R. M. Feenstra J. Neugebauer D. W. Greve

InGaN alloys with (0001) or (000 ) polarities are grown by plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy images, interpreted using first-principles theoretical calculations, show that there is strong indium surface segregation on InGaN for both (0001) and (000 ) polarities. Evidence for the existence and stability of a structure containing two adlayers of indium on the I...

Journal: :Thorax 1990
D C Currie A M Peters N D Garbett P George B Strickland J P Lavender P J Cole

Thirty eight patients with chronic sputum expectoration underwent indium-111 labelled granulocyte lung scanning and measurement of whole body loss of indium-111 labelled granulocytes. Twenty four patients had radiologically proved bronchiectasis and 14 had mucus hypersecretion without radiological evidence of bronchiectasis. None was having an acute exacerbation at the time of the scan. The med...

2011
Qingduan Meng Wei Tian Yanqiu Lv Weiguo Sun

Based on viscoplastic Anand’s model, structural stress of 8 8 InSb array detector dependent on indium bump sizes is systemically researched by finite element method. For the detector with underfill, simulation results show that as the diameters of indium bump decrease from 36μm to 20μm in step of 2μm, the maximum stress existing in InSb chip first reduces sharply, then increases flatly, and rea...

2006
Mohamed A. HAFEZ Hani E. ELSAYED-ALI

Deposition of indium on Si(100) substrates is performed under ultrahigh vacuum with an amplified Ti:sapphire laser (130 fs) at wavelength of 800 nm and laser fluence of 0.5 J/cm. Indium films are grown at room temperature and at higher substrate temperatures with a deposition rate of ~ 0.05 ML/pulse. Reflection high-energy electron diffraction (RHEED) is used during the deposition to study the ...

2008
N. Vitas R. J. Rutten

The generally adopted value for the solar abundance of indium is over six times higher than the meteoritic value. We address this discrepancy through numerical synthesis of the 451.13 nm line on which all indium abundance studies are based, both for the quiet-sun and the sunspot umbra spectrum, employing standard atmosphere models and accounting for hyperfine structure and Zeeman splitting in d...

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