Recycling of the semiconductor material copper indium gallium diselenide (CIGS) is important to ensure a future supply of indium and gallium, which are relatively rare and therefore expensive elements. As a continuation of our previous work, where we recycled high purity selenium from CIGS waste materials, we now show that copper and indium can be recycled by electrodeposition from hydrochloric...

Milica M. Gvozdenović1,*, Branimir Z. Jugović2, Jasmina S. Stevanović3, Tomislav Lj. Trišović2 and Branimir N. Grgur1 1Department of Physical Chemistry and Electrochemistry, Faculty of Technology and Metallurgy, University of Belgrade, Belgrade, 2Institute of Technical Sciences, Serbian Academy of Science and Arts, 3Center for Electrochemistry, Institute of Technology and Metallurgy, Belgrade S...

Articles you may be interested in A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination Instability of amorphous hafnium-indium-zinc-oxide thin film transistors under negative-bias-illumination stress Appl. Investigation of zinc interstitial ions as the origin of anomalo...

Indium is a heavy metal belonging to group IIIa. It is believed that indium may interfere with iron metabolism from the sites of absorption, transportation, utilization and storage in the cells. The present investigation was established to study and compare the binding of iron and indium to human apo-transferrin (apo-tf). Pure human apo-tf was used and the binding activity of iron and indium, a...

Indium belongs to Group III A in the periodic table and it is mainly used in the making of thin-film transistor liquid crystal displays (LCDs) for television screens, portable computer screens, pocket telephone displays and video monitors, mainly through the utilization of indiumtin oxide (ITO). ITO is a sintered alloy containing a large portion of indium oxide and a small portion of tin oxide....

Li Zhang 1,*, Wu Zhang 2, Juhua Zhang 3 and Guangqiang Li 3 1 School of Materials and Metallurgy, Northeastern University, Shenyang 110819, China 2 School of Materials Science and Engineering, Shenyang Ligong University, Shenyang 110168, China; [email protected] 3 The State Key Laboratory of Refractories and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China; zhangj...

In this paper, we present our ab-initio study on energy configurations, minimum energy path (MEP), and migration energy for neutral indium diffusion in a uniaxial and biaxial tensile strained {100} silicon layer. Our abinitio calculation of the electronic structure allowed us to figure out transient atomistic configurations during the indium diffusion in strained silicon. We found that the lowe...

A sensitive and simple method for the determination of trace amounts of indium in water samples by graphite furnace atomic absorption spectrometry (GFAAS) after coprecipitation with chitosan was investigated. Indium was quantitatively preconcentrated from water samples by coprecipitation with chitosan at pH 7.0-9.0. The coprecipitant was easily dissolved with acetic acid, and indium in the resu...