A high Q-factor (quality-factor) spiral inductor fabricated by the CMOS (complementary metal oxide semiconductor) process and a post-process was investigated. The spiral inductor is manufactured on a silicon substrate. A post-process is used to remove the underlying silicon substrate in order to reduce the substrate loss and to enhance the Q-factor of the inductor. The post-process adopts RIE (...

this paper presents a wide band RF MEMS VCO operating at 10 GHz. The designed VCO is based on high performances RF MEMS solenoid inductor. We have used HFSS software for design and analysis of different RF MEMS solenoid inductors. Best performances are obtained using SU8 dielectric substrate and copper coil: Qmax= 60.9, L = 2.6 nH at 10 GHz, and SRF= 20.8 GHz. Moreover, we have investigated the...

A striped inductor and its utilization of a voltagecontrolled oscillator (VCO) are studied with the aim of suppressing phase noise degradation in Kand Ka-bands. The proposed striped inductor exhibits reduced series resistance in the high frequency region by increasing the cross-sectional peripheral length, as with the Litz wire, and the VCO of the striped inductor simultaneously exhibits a lowe...

A new capacitively coupled contactless conductivity detection (C(4)D) sensor with an improved simulated inductor is developed in this work. The improved simulated inductor is designed on the basis of the Riordan-type floating simulated inductor. With the improved simulated inductor, the negative influence of the coupling capacitances is overcome and the conductivity measurement is implemented b...

In this work, a non-isolated high step up DC-DC converter using coupled inductor and voltage multiplier cell is proposed. The proposed converter conversion ratio is efficiently extended by using a coupled inductor. An interleaved configuration of two diode-capacitor cells is applied to step up the voltage conversion ratio and decrease the voltage stress across the switches. Also, in the suggest...

A RF voltage-controlled oscillator (VCO) employs an onchip, high-Q, three-dimensional (3-D) coil inductor and micromachined variable capacitor for frequency tuning. Unlike conventional spiral inductors, the 3-D inductor minimizes the substrate loss and achieves a record Q of 30 at 1 GHz. The micromachined variable capacitor achieves a 15% tuning range with a nominal 2pF capacitance and a Q valu...

The contribution is concerned on structural properties and general features of the new ideal circuit element, a memristor. By definition, a memristor relates the charge q and the magnetic flux φ in a circuit, and complements a resistor R, a capacitor C, and an inductor L as an ingredient of ideal electrical circuits. The definition of the memristor is based solely on fundamental circuit variabl...

The conventional hard-switching converters suffer from the limitations like upper limit on switching frequency, high electromagnetic interference (EMI), more losses, large size, increased weight and low efficiency. To overcome these limitations, resonant are popularly used in chargers of electric vehicles (EVs). However, detailed classification EVs is not sufficiently discussed literature. guid...

In this paper, a 5.2GHz low noise amplifier in 0.25um CMOS utilizing inter-stage matching is designed. Two realizations for a low value of inductor within the LNA are implemented. The measurement results are 7dB gain and 5.86dB noise figure is achieved for the on-chip inductor realization, and 8.3dB gain and 5.74dB noise figure is achieved for the bond-wire inductor realization.

This paper reports a single-wafer micromachined radiofrequency (RF) inductor that can be integrated in a conventional RFIC device. The inductor achieved a quality factor greater than 9 at 5Ghz and a self-resonance frequency well above 15 GHz. The inductor is tunable and the inductance variation is greater than 8%.