0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.01.044 * Corresponding author. Tel.: +886 35915126; fax: E-mail address: [email protected] (H.-P.D. Yang). An InGaAs submonolayer (SML) quantum-dot photonic-crystal light-emitting diode (QD PhC-LED) with for fiber-optic applications is reported. The active region of the device contains three InGaAs SML QD layers. Eac...

We compare a more complete characterization of the low temperature performance of a nominal 1.7um cut-off wavelength 1kx1k InGaAs (lattice-matched to an InP substrate) photodiode array against similar, 2kx2k HgCdTe imagers to assess the suitability of InGaAs FPA technology for scientific imaging applications. The data we present indicate that the low temperature performance of existing InGaAs d...

We report on the InGaAs/GaAsSb material system lattice-matched to InP for intersubband devices. Due to the much lower electron effective mass in the GaAsSb barrier material, this system is very promising for the realization of high performance intersubband devices, like quantum-cascade lasers and quantum well infrared photodetectors. Type I intersubband absorption in InGaAs/GaAsSb multi-quantum...

Abstract. Recently, a lateral double diffused metal-oxide-semiconductor (LDMOS) using In0.53Ga0.47As having an extended–p + (ep+) body has been shown to be better than a conventional silicon based LDMOS. In this paper, we show that using a stepped gate (SG) for the InGaAs LDMOS, a significantly improved performance can be achieved than using an extended–p+ body for the InGaAs LDMOS. The propose...

In this paper, we have studied the strain, band-edge, and energy levels of cubic InGaAs quantum dots (QDs) surrounded by GaAs. It is shown that overall strain value is larger in InGaAs-GaAs interfaces, as well as in smaller QDs. Also, it is proved that conduction and valence band-edges and electron-hole levels are size dependent; larger QD sizes appeared to result in the lower recombination...

The basic active and passive elements for a 50 nm InGaAs-InAlAs-InP HEMT process with pseudomorphic InGaAs channel have been realized. The design and fabrication of 50 nm gate length InP HEMTs, MIM capacitors and thin film resistors have been studied. The integration of the components in a microstrip-based MMIC process has been proven by the successful demonstration of a wideband amplifier.

Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs, with and without Be doping. The Be-doped material is observed to contain significantly fewer AsGa antisite defects than the undoped material, with no evidence found for Be-As complexes. Annealing of the LTG-InGaAs forms precipitates preferentially in the undoped material. The previously observed dependence of the...

The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by metalorganic chemical vapor deposition (MOCVD). However, the growth of InGaAs NWs on graphene results in spontaneous phase separation starting from the beginning of growth, yielding a well-defined InAs-In(x)Ga(1-x)As (0.2 < ...

PURPOSE Previous studies of optical interference from the whole thickness of the precorneal tear film showed much lower contrast than from the pre-contact lens tear film. It is hypothesized that the recorded low contrast is related to roughness of the corneal surface compared with the smooth contact lens surface. This hypothesis is tested, and characteristics of this roughness are studied. ME...