The effects of the radiation displacement defect on an insulated-gate bipolar transistor are investigated using computer-aided design simulation technology. DC characteristics, breakdown voltage, and power dissipation analyzed according to position, energy, types trap caused by effect. on-current is degraded 100% due defect, which generated near emitter–gate region. An acceptor-like with Ec ? 0...

A systematic methodology is developed in order to clarify the punch through Trench Insulated Gate Bipolar Transistor (T-IGBT) failure mechanisms which can occur under extreme operating conditions such as short circuit and clamped inductive switching. By considering a 2D dimensional physically based device simulation, and by analyzing some T-IGBT physical parameters, it is possible to identify i...

This paper presents an Analog behavioral model (ABM) of the Insulated Gate Bipolar Transistor (IGBT) with Orcad Pspice 16.5. The Spice model was built using device parameters extracted through experiment. A full study of switching behavior of IGBT during turn-off and turn-on for inductive load with freewheeling diode is presented and simulated. All simulation results presented in this paper are...

The switching device turn-on and turn-off process will produce high-frequency electromagnetic interference, based on the finite element method ANSYS software with powerful computing capabilities, has been widely used in complex electromagnetic field calculations. In this paper, ANSYS software to model and analyze the insulated gate bipolar transistor (IGBT) and quantitative distribution of elec...

This paper reviews the main failure mechanisms occurring in modern power modules paying special attention to insulated gate bipolar transistor devices for high-power applications. This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent relia...

Electronics components have and increasingly critical role in avionics systems and for the development of future aircraft systems. Prognostics of such components is becoming a very important research filed as a result of the need to provide aircraft systems with system level health management. This paper reports on a prognostics application for electronics components of avionics systems, in par...

Trench gate field termination IGBT represents the latest structure of insulated bipolar transistor (IGBT). Because internal current includes charging and discharging capacitance junction during switching transient, influence should be considered. The conductive channel trench is different from that planar structure, analysis method using will inevitably bring some deviation. Based on characteri...