A multi-nanosheet field-effect transistor (mNS-FET) device was developed to maximize gate controllability while making the channel in form of a sheet. The mNS-FET has superior for stacked channels; consequently, it can significantly reduce short-channel effect (SCE); however, punch-through inevitably occurs bottom portion that is not surrounded by gates, resulting large leakage current. Moreove...

A novel 3D field effect transistor on SOI – screen-grid FET (SGrFET) – is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedded in the SOI body. This novel gate topology improves efficiency and allows great flexibility in device and gate geometry to optimize DC performance. Th...

Trench gate field termination IGBT represents the latest structure of insulated bipolar transistor (IGBT). Because internal current includes charging and discharging capacitance junction during switching transient, influence should be considered. The conductive channel trench is different from that planar structure, analysis method using will inevitably bring some deviation. Based on characteri...

In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...

Simple parameter extraction is the goal of a new Basic IGBT model designed for use by application engineers. The model has good accuracy yet its parameters can be quickly extracted from three standard measurements or from data sheets.

The concept of semicopula plays a fundamental role in the definition of a universal integral. We present an extension of semicopula to the case of symmetric interval [−1,1]. We call this extension bipolar semicopula. The last definition can be used to obtain a simplified definition of the bipolar universal integral. Moreover bipolar semicopulas allow for extension of theory of copulas to the in...

Abstract Models and experimental data are used to predict the performance of large area pressure contact IGBTs, offering ratings equivalent to the largest power conventional technology devices. Differences in the electromechanical characteristics of pressure contact devices, when compared to substrate mounted devices, are reviewed and how these influence the potential performance of devices wit...