نتایج جستجو برای: integrated optoelectronic circuit

تعداد نتایج: 371760  

Realization of a novel single-resistance-controlled oscillator, employing an active element and all grounded passive elements, is the purpose of this manuscript. With requirements for completing the design being only a single Voltage Differencing Current Conveyor and four grounded passive components, it is also a preferable choice for integrated circuit implementation. The designed circuit has ...

Journal: :Nature materials 2003
Kanna Aoki Hideki T Miyazaki Hideki Hirayama Kyoji Inoshita Toshihiko Baba Kazuaki Sakoda Norio Shinya Yoshinobu Aoyagi

Electronic devices and their highly integrated components formed from semiconductor crystals contain complex three-dimensional (3D) arrangements of elements and wiring. Photonic crystals, being analogous to semiconductor crystals, are expected to require a 3D structure to form successful optoelectronic devices. Here, we report a novel fabrication technology for a semiconductor 3D photonic cryst...

Journal: :Science China Information Sciences 2023

In recent years, two-dimensional (2D) materials-based fundamental preparing process such as high-quality wafer-level single crystal thin film synthesis technology and high-performance electrode has developed rapidly. addition, the integrated application prospect of 2D materials been preliminarily verified, owing to flat clean interface between substrates. From perspective electronics optoelectr...

Journal: :Biomedical optics express 2013
Thomas D O'Sullivan Roxana T Heitz Natesh Parashurama David B Barkin Bruce A Wooley Sanjiv S Gambhir James S Harris Ofer Levi

Performance improvements in instrumentation for optical imaging have contributed greatly to molecular imaging in living subjects. In order to advance molecular imaging in freely moving, untethered subjects, we designed a miniature vertical-cavity surface-emitting laser (VCSEL)-based biosensor measuring 1cm(3) and weighing 0.7g that accurately detects both fluorophore and tumor-targeted molecula...

Journal: :Optics express 2004
Hilmi Demir Vijit Sabnis Onur Fidaner James Harris David Miller Jun-Fei Zheng

We present a dual-diode, InGaAsP/InP quantum-well modulator that incorporates a monolithically-integrated, InGaAs photodiode as a part of its on-chip, InP optoelectronic circuit. We theoretically show that such a dual-diode modulator allows for wavelength conversion with 10-dB RF-extinction ratio using 7 mW absorbed optical power at 10 Gb/s. We experimentally demonstrate unlimited wavelength co...

2014
B. Wan Y. Dong Aibin Xu

Article history: Received: 14.01.2014. Received in revised form: 01.03.2014. Accepted: 12.03.2014. Optoelectronic coupler, characterized by long life and high reliability, is one typical kind of optoelectronic devices. Accelerated degradation testing is mostly utilized to assess optoelectronic coupler storage life. However, in engineering, integrated optoelectronic coupler may be nagged with th...

1999
T. Akeyoshi H. Matsuzaki T. Itoh T. Waho

Ultrahigh-speed circuit applications of resonant-tunneling diodes (RTDs) have been developed. The key points are the utilization of the edge-triggered and latching properties arising from negative differential resistance of the RTD, and the combination of RTDs and high electron mobility transistors (HEMTs). High-speed and low power operation of various flip-flop (FF) circuits monolithically int...

Journal: :Microelectronics Journal 2012
Beatriz Blanco-Filgueira Paula López Martinez Juan B. Roldán

The market of CMOS image sensors is rapidly gaining in importance since optoelectronic devices are present in an increasing number of electronic systems. Therefore, accurate scalable optoelectronic models for photodetectors are necessary to predict their behaviour by circuit simulation. Hardware Description Languages (HDLs) offer and effective and efficient way to describe these systems. In thi...

2000
Christopher LaBounty Ali Shakouri Patrick Abraham John E. Bowers

Active refrigeration of optoelectronic components through the use of thin film solid state coolers based on III-V materials is proposed and investigated. Enhanced cooling power comparing to the thermoelectric effect of the bulk material is achieved through thermionic emission of hot electrons over a heterostructure barrier layer. It is shown that these heterostructures can be monolithically int...

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