نتایج جستجو برای: integrated optoelectronics
تعداد نتایج: 274598 فیلتر نتایج به سال:
Low Power Opportunities for a Simd Vlsi Architecture Incorporating Integrated Optoelectronic Devices
Integrated optoelectronic interconnect offers a potentially lower cost, higher density alternative to wire-based technologies for I/O. For most applications, low cost IC packages provide an effective means of I/O in a system. However, some applications, such as image processing, require higher levels of off-chip I/O bandwidth than can be provided using perimeter bonded ICs. The SIMD Pixel Proce...
Transition-metal dichalcogenide (TMDC) homo- and heterostacks hold tantalizing prospects for being integrated as active components in future van der Waals (vdW) electronics optoelectronics. How...
Since the introduction of SiO2/Si devices in the 1960s, the only basic change in the design of a MOSFET has been in the gate length. The channel thickness has fundamentally remained unchanged, as the inversion layer in a silicon MOSFET is still about 10 nm thick. Bipolar transistor base widths have been of sub-micron dimensions all this time. It is time for a new property to be exploited in con...
The realization of low-cost photodetectors with high sensitivity, high quantum efficiency, high gain and fast photoresponse in the visible and short-wave infrared remains one of the challenges in optoelectronics. Two classes of photodetectors that have been developed are photodiodes and phototransistors, each of them with specific drawbacks. Here we merge both types into a hybrid photodetector ...
ISBN 978-3-00-024191-8 27th 30th September 2009, Capri, Italy Highly efficient Gd, Lu co-doped KY(WO4)2:Yb3+ planar waveguide laser Dimitri Geskus, Shanmugam Aravazhi, Edward Bernhardi, Christos Grivas, Kerstin Wörhoff, Markus Pollnau University of Twente, MESA+ Institute for Nanotechnology, Integrated Optical MicroSystems Group, 7500 AE Enschede, Netherlands On leave from Optoelectronics Resea...
a Institut National de la Recherche Scientifique-Énergie, Matériaux et Télécommunications (INRS-EMT), Varennes, Québec J3X 1S2, Canada b State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China University of Chinese Academy of Sciences, Beijing 100049, China d TeCIP Institute, Scuola Superiore Sant’Anna, Pisa 56124, Ital...
Advances in materials, mechanics, and manufacturing now allow construction of high-quality electronics and optoelectronics in forms that can readily integrate with the soft, curvilinear, and time-dynamic surfaces of the human body. The resulting capabilities create new opportunities for studying disease states, improving surgical procedures, monitoring health/wellness, establishing human-machin...
Xianwen Liu,1 Changzheng Sun,1, ∗ Bing Xiong,1 Lai Wang,1 Jian Wang,1 Yanjun Han,1 Zhibiao Hao,1 Hongtao Li,1 Yi Luo,1 Jianchang Yan,2 Tongbo Wei,2 Yun Zhang,2 and Junxi Wang2 1Tsinghua National Laboratory for Information Science and Technology, State Key Lab on Integrated Optoelectronics, Department of Electronic Engineering, University, Beijing 100084, China 2Research and Development Center f...
The policies deployed by the government in Taiwan determine dramatically affect the development of a sector. In the past three decades, the high-tech industry has contributed to the prosperity of the economy for Taiwan. The focus of potential sectors includes green energy, optoelectronics, biotechnology industry, and agricultural science and technology industries. This study is to develop an en...
Nanophotonics, Nanoelectronics and Nanosensor (N3) is part of International Photonics and OptoElectronics Meetings (POEM), launched by Wuhan National Laboratory for Optoelectronics (WNLO). POEM is a large-scale multi-disciplinary international conference in the field of photonics and optoelectronics. It aims to focus on the key techniques of scientific frontier and industry in the field of opto...
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