نتایج جستجو برای: intersubband transitions
تعداد نتایج: 74833 فیلتر نتایج به سال:
Trace-gas analysis and chemical sensing using quantum cascade lasers (QCLs) has attracted more attention in recent years since most molecules have a unique absorption spectrum in the mid-infrared (mid-IR) region. With many commercial options available, QCLs are ideal candidates for mid-IR spectroscopy because their emission wavelength reaches from the mid-IR to the far-IR with high power effici...
The rate of interband electron transitions assisted by LO-phonon emission is studied in an InAs/ GaSb double quantum well heterostructure, which models the active region of a type-II intersubband cascade laser. The main peak of the electron-phonon resonance corresponds to electron transitions from the lowest electron-like subband to the top of the highest light-hole-like subband that is displac...
AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport. In this article, a step quantum well is proposed to attempt solving this problem, in which a nov...
The theory of the remote Coulomb impurity scattering in single-wall carbon nanotubes is developed within a one-electron approximation. The Boltzmann equation is solved within the drift-diffusion model to obtain the tube conductivity. The conductivity depends on the type of the nanotube band structure (metal or semiconductor) and on the electron Fermi energy. We found that the exponential depend...
Recent reports have highlighted the potential importance of intersubband transitions between the two lowest conduction subbands ( C 1, C 2) of a semiconductor superlatdce (SL) in optoelectronic applications. ! -3 Two factors are of key significance: intersubband transitions are spectrally tunable and exceptionally strong. The VB (valence band) -C 1 band gap and the C 1 -> C 2 subband gap are de...
A pulsed layer-by-layer deposition (PLLD) technique possessing triple growth rates compared to conventional growth techniques is developed by metal organic chemical vapor deposition to realize high-quality high-aluminum content ordered AlXGa(1 X)N (0.5<X). X-ray diffraction, photoluminescence, and transmission measurements are employed to demonstrate control over aluminum content, structural un...
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